CAJ | 학술논문

影响大功率开关晶体管高温反偏能力的主要因素是表面沾污.从大功率开关晶体管表面沾污的主要来源、杂质类型上分析了半导体功率器件高温反偏的失效机理.为了改善高温反偏条件下功率晶体管的性能,结合实验室现有的条件,从SiO_2的生长工艺和芯片表面钝化技术这两个方面出发,找到了有效的工艺路线.采用C_2HCl_3掺Cl氧化工艺和聚酰亚胺表面钝化工艺,有效地减轻和消除了芯片制造过程中的表面沾污,提高了产品的质量和在高温环境下的可靠性.
영향대공솔개관정체관고온반편능력적주요인소시표면첨오.종대공솔개관정체관표면첨오적주요래원、잡질류형상분석료반도체공솔기건고온반편적실효궤리.위료개선고온반편조건하공솔정체관적성능,결합실험실현유적조건,종SiO_2적생장공예화심편표면둔화기술저량개방면출발,조도료유효적공예로선.채용C_2HCl_3참Cl양화공예화취선아알표면둔화공예,유효지감경화소제료심편제조과정중적표면첨오,제고료산품적질량화재고온배경하적가고성.
Contamination on the surface of Si is the principal factor for high temperature reverse bias of power switch transistors. The failure mechanism was analyzed from device source and types of the contamination on Si surface. In order to improve the function of a power device, the valid process was found from the growth process of SiO_2 and surface passivation technology of semiconductor wafers in the lab experimental condition. The method is to apply the oxidation with Cl adopting chlorylene and surface passivation technology using polyimide to reduce or even eliminate the contamination on the surface of a wafer and to raise the quality and reliability under high temperature of the product effectually.