高能物理与核物理
高能物理與覈物理
고능물리여핵물리
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS
2007年
z1期
229-231
,共3页
赵环昱%赵红卫%孙良亭%张雪珍%盛六四%田扬超%张国斌
趙環昱%趙紅衛%孫良亭%張雪珍%盛六四%田颺超%張國斌
조배욱%조홍위%손량정%장설진%성륙사%전양초%장국빈
EUV light source%ECR plasma%EUV power
The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography.However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product.Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography.ECR plasma seems to be one of the alternatives.In order to investigate the feasibility of ECR plasma as a EUV light source.the EUV power emitted by SECRAL was measured.A EUV power of 1.03W in 4π sr solid angle was obtained when 2000W 18GHz rf power was launched,and the corresponding CE was 0.5%.Considering that SECRAL is designed to produce very high charge state ions.this very preliminary result is inspiring.Room-temperature ECR plasma and Sn plasma are both in the planned schedule.
