半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
7期
1246-1248
,共3页
姚小江%蒲颜%刘新宇%吴伟超
姚小江%蒲顏%劉新宇%吳偉超
요소강%포안%류신우%오위초
TaN%NiCr%薄膜电阻%可靠性%微波集成电路
TaN%NiCr%薄膜電阻%可靠性%微波集成電路
TaN%NiCr%박막전조%가고성%미파집성전로
TaN%NiCr%TFR%reliability%MMIC
TaN和NiCr是AlGaN/GaN HEMTs微波集成电路中薄膜电阻最为常用的两种材料.文中对比了在SiC衬底上生长的这两种材料的薄膜电阻的可靠性.通过TaN和NiCr薄膜电阻的对比,发现TaN薄膜电阻的方块电阻(Rs)随着退火温度的上升而增大,然而NiCr薄膜电阻的Rs却出现相反的趋势.同时发现随着退火温度的上升TaN薄膜电阻的s.和接触电阻(Rc)的变化远远小于NiCr薄膜电阻的变化.在400℃退火及等离子刻蚀机的氧等离子暴露后,TaN薄膜电阻的Rs只下降了0.7Ω,大概2.56%,并且Rc上升了0.1Ω,大概6.6%.但是NiCr薄膜电阻的Rs.和Rc在不同的退火条件下经过氧等离子暴露后发生了很大的变化.因此,TaN薄膜电阻在氮气保护下经过400℃退火后在氧等离子暴露下更为稳定.
TaN和NiCr是AlGaN/GaN HEMTs微波集成電路中薄膜電阻最為常用的兩種材料.文中對比瞭在SiC襯底上生長的這兩種材料的薄膜電阻的可靠性.通過TaN和NiCr薄膜電阻的對比,髮現TaN薄膜電阻的方塊電阻(Rs)隨著退火溫度的上升而增大,然而NiCr薄膜電阻的Rs卻齣現相反的趨勢.同時髮現隨著退火溫度的上升TaN薄膜電阻的s.和接觸電阻(Rc)的變化遠遠小于NiCr薄膜電阻的變化.在400℃退火及等離子刻蝕機的氧等離子暴露後,TaN薄膜電阻的Rs隻下降瞭0.7Ω,大概2.56%,併且Rc上升瞭0.1Ω,大概6.6%.但是NiCr薄膜電阻的Rs.和Rc在不同的退火條件下經過氧等離子暴露後髮生瞭很大的變化.因此,TaN薄膜電阻在氮氣保護下經過400℃退火後在氧等離子暴露下更為穩定.
TaN화NiCr시AlGaN/GaN HEMTs미파집성전로중박막전조최위상용적량충재료.문중대비료재SiC츤저상생장적저량충재료적박막전조적가고성.통과TaN화NiCr박막전조적대비,발현TaN박막전조적방괴전조(Rs)수착퇴화온도적상승이증대,연이NiCr박막전조적Rs각출현상반적추세.동시발현수착퇴화온도적상승TaN박막전조적s.화접촉전조(Rc)적변화원원소우NiCr박막전조적변화.재400℃퇴화급등리자각식궤적양등리자폭로후,TaN박막전조적Rs지하강료0.7Ω,대개2.56%,병차Rc상승료0.1Ω,대개6.6%.단시NiCr박막전조적Rs.화Rc재불동적퇴화조건하경과양등리자폭로후발생료흔대적변화.인차,TaN박막전조재담기보호하경과400℃퇴화후재양등리자폭로하경위은정.
Tantalum nitride (TAN) and nichrome (NiCr) are the two most common materials used as thin film resistors (TFR) for monolithic microwave integrated circuits (MMIC) based on AlGaN/GaN high electron mobility transistors (HEMTs). In this study, we compare the reliability of the two materials used as TFRs on a semi-insulation 4H SiC substrate. Through the comparison between NiCr and TaN thin-film resistor materials, we find the square resistor (Rs) of TaN TFR increases as the annealing temperature increases. However, the R, of NiCr TFR shows the opposite trend. We also find the change of the TaN Rs and contacted resistor (Rc) is smaller than the NiCr. After O2 plasma exposure in RIE, the TaN Rs only decreases 0.7Ω, or about 2. 56% ,and Rc increases 0. 1Ω, or about 6. 6% , at an annealing temperature of 400℃. In contrast, the NiCr Rs and Rc show large changes at different annealing temperatures after O2 plasma exposure. In conclusion, TaN is more stable during plasma exposure after 400℃ annealing in N2 ambient.
