半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
12期
1872-1877
,共6页
沈良国%严祖树%王钊%张兴%赵元富
瀋良國%嚴祖樹%王釗%張興%趙元富
침량국%엄조수%왕쇠%장흥%조원부
线性稳压器%低压差%缓慢滚降式频率补偿%线性调整率%负载调整率
線性穩壓器%低壓差%緩慢滾降式頻率補償%線性調整率%負載調整率
선성은압기%저압차%완만곤강식빈솔보상%선성조정솔%부재조정솔
voltage regulator%LDO%slow-rolloff frequency compensation%line regulation%load regulation
提出了LDO,其基于缓慢滚降式频率补偿方法,通过在电路中引入三个极零对(极零对的产生没有增加静态功耗),不仅克服了常规LDO不能使用低等效串联电阻、低成本陶瓷输出电容的缺点,而且确保了系统在整个负载和输入电压变化范围内稳定工作.由于LDO通常给高性能模拟电路供电,因此其输出电压精度至关重要;而该补偿方法能满足高环路增益、高单位增益带宽的设计要求,从而大幅提高LDO的精度.该LDO基于0.5μm CMOS工艺实现.后仿结果表明,即使在低压满负载条件下,其开环DC增益仍高于70dB,满载时单位增益带宽可达3MHz,线性调整率和负载调整率分别为27μV/V和3.78μV/mA,过冲和欠冲电压均小于30mV,负载电流为150mA时的漏失电压(dropout电压)仅为120mV.
提齣瞭LDO,其基于緩慢滾降式頻率補償方法,通過在電路中引入三箇極零對(極零對的產生沒有增加靜態功耗),不僅剋服瞭常規LDO不能使用低等效串聯電阻、低成本陶瓷輸齣電容的缺點,而且確保瞭繫統在整箇負載和輸入電壓變化範圍內穩定工作.由于LDO通常給高性能模擬電路供電,因此其輸齣電壓精度至關重要;而該補償方法能滿足高環路增益、高單位增益帶寬的設計要求,從而大幅提高LDO的精度.該LDO基于0.5μm CMOS工藝實現.後倣結果錶明,即使在低壓滿負載條件下,其開環DC增益仍高于70dB,滿載時單位增益帶寬可達3MHz,線性調整率和負載調整率分彆為27μV/V和3.78μV/mA,過遲和欠遲電壓均小于30mV,負載電流為150mA時的漏失電壓(dropout電壓)僅為120mV.
제출료LDO,기기우완만곤강식빈솔보상방법,통과재전로중인입삼개겁령대(겁령대적산생몰유증가정태공모),불부극복료상규LDO불능사용저등효천련전조、저성본도자수출전용적결점,이차학보료계통재정개부재화수입전압변화범위내은정공작.유우LDO통상급고성능모의전로공전,인차기수출전압정도지관중요;이해보상방법능만족고배로증익、고단위증익대관적설계요구,종이대폭제고LDO적정도.해LDO기우0.5μm CMOS공예실현.후방결과표명,즉사재저압만부재조건하,기개배DC증익잉고우70dB,만재시단위증익대관가체3MHz,선성조정솔화부재조정솔분별위27μV/V화3.78μV/mA,과충화흠충전압균소우30mV,부재전류위150mA시적루실전압(dropout전압)부위120mV.
A high-accuracy,low-dropout (LDO) voltage regulator is presented.Using the slow-rolloff frequency compensation scheme,the LDO effectively overcomes the stability problem,facilitates the use of a ceramic capacitor,and improves the output voltage accuracy,which is critical for powering high-performance analog circuitry.The slow-rolloff compensation scheme is realized by introducing three pole-zero pairs,including the proposed pole-zero pair and sense zero.The post-layout simulation results demonstrate that this LDO has robust system stability,a high open-loop gain,and a high unit-gain frequency,which lead to excellent regulation and transient response performance.The line and load regulation are 27μV/V and 3.78μV/mA,and the overshoots of the output voltage are less than 30mV,while the dropout voltage is 120mV for a 150mA load current.