半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
z1期
24-27
,共4页
周晓龙%孙聂枫%杨瑞霞%张伟玉%孙同年%Jarasiunas K%Sudzius M%Kadys A
週曉龍%孫聶楓%楊瑞霞%張偉玉%孫同年%Jarasiunas K%Sudzius M%Kadys A
주효룡%손섭풍%양서하%장위옥%손동년%Jarasiunas K%Sudzius M%Kadys A
磷化铟%四波混频%深陷阱%载流子输运
燐化銦%四波混頻%深陷阱%載流子輸運
린화인%사파혼빈%심함정%재류자수운
InP%ps-degenerate four-wave mixing%deep defect%carrier transport
利用四波混频(FWM)技术对未掺杂双面抛光的InP晶片进行了测试分析.室温下在1064nm用时间分辨皮秒四波混频技术测试了材料的载流子的产生、复合、衰减动力学以及曝光特性等过程.阐明了InP中深陷阱在载流子的产生与输运中的作用,并给予了解释.未掺杂InP样品的衍射效率作为能量函数可用两个光栅周期来表达.未掺杂InP样品中的深施主缺陷也由空间电荷载流子的输运过程来证实.
利用四波混頻(FWM)技術對未摻雜雙麵拋光的InP晶片進行瞭測試分析.室溫下在1064nm用時間分辨皮秒四波混頻技術測試瞭材料的載流子的產生、複閤、衰減動力學以及曝光特性等過程.闡明瞭InP中深陷阱在載流子的產生與輸運中的作用,併給予瞭解釋.未摻雜InP樣品的衍射效率作為能量函數可用兩箇光柵週期來錶達.未摻雜InP樣品中的深施主缺陷也由空間電荷載流子的輸運過程來證實.
이용사파혼빈(FWM)기술대미참잡쌍면포광적InP정편진행료측시분석.실온하재1064nm용시간분변피초사파혼빈기술측시료재료적재류자적산생、복합、쇠감동역학이급폭광특성등과정.천명료InP중심함정재재류자적산생여수운중적작용,병급여료해석.미참잡InP양품적연사효솔작위능량함수가용량개광책주기래표체.미참잡InP양품중적심시주결함야유공간전하재류자적수운과정래증실.
Fifty-millimeter undoped indium phosphide (InP) wafers polished on both sides were measured by a psdegenerate four-wave mixing (FWM) technique.Deep defect related carrier generation,recombination,and decay kinetics and exposure characteristics were measured by time-resolved picosecond FWM at 1064nm at room temperature. The diffraction efficiency of an undoped InP sample as a function of energy is shown for two grating periods. Deep donor defects in undoped InP samples are confirmed by the pronounced effect of space charge electric field on carrier transport.
