人工晶体学报
人工晶體學報
인공정체학보
2007年
1期
32-37
,共6页
Si2N2O纳米线%光学性能%VLS生长机制
Si2N2O納米線%光學性能%VLS生長機製
Si2N2O납미선%광학성능%VLS생장궤제
Si2N2O nanowires%optical properties%VLS growth mechanism
在Ni催化剂的存在下,通过SiCl4的水解氨解反应并在1300℃氨气气氛中进行热氮化处理制得了无定形氮氧化硅纳米线.产物经X射线衍射(XRD)、热重-差示扫描量热(TG-DSC)、扫描电镜(SEM)、透射电镜(TEM)、能量色散谱(EDS)和选区电子衍射(SAED)等表征手段进行分析,结果表明纳米线为无定形结构,直径为100～150nm.在波长为220nm的光激发下,产物的光致发光光谱(PL)在563nm和289nm处分别出现了一个强的绿光发光峰和一个弱的紫光发光峰.对纳米线的生长机理进行分析,表明纳米线的生长遵循气-液-固(VLS)机制控制模式.
在Ni催化劑的存在下,通過SiCl4的水解氨解反應併在1300℃氨氣氣氛中進行熱氮化處理製得瞭無定形氮氧化硅納米線.產物經X射線衍射(XRD)、熱重-差示掃描量熱(TG-DSC)、掃描電鏡(SEM)、透射電鏡(TEM)、能量色散譜(EDS)和選區電子衍射(SAED)等錶徵手段進行分析,結果錶明納米線為無定形結構,直徑為100～150nm.在波長為220nm的光激髮下,產物的光緻髮光光譜(PL)在563nm和289nm處分彆齣現瞭一箇彊的綠光髮光峰和一箇弱的紫光髮光峰.對納米線的生長機理進行分析,錶明納米線的生長遵循氣-液-固(VLS)機製控製模式.
재Ni최화제적존재하,통과SiCl4적수해안해반응병재1300℃안기기분중진행열담화처리제득료무정형담양화규납미선.산물경X사선연사(XRD)、열중-차시소묘량열(TG-DSC)、소묘전경(SEM)、투사전경(TEM)、능량색산보(EDS)화선구전자연사(SAED)등표정수단진행분석,결과표명납미선위무정형결구,직경위100～150nm.재파장위220nm적광격발하,산물적광치발광광보(PL)재563nm화289nm처분별출현료일개강적록광발광봉화일개약적자광발광봉.대납미선적생장궤리진행분석,표명납미선적생장준순기-액-고(VLS)궤제공제모식.
Amorphous silicon oxynitride (Si2N2O) nanowires were prepared by hydrolysis and ammonolysis of SiCl4 with the present of Ni catalyst in a stream of NH3 at the temperature up to 1300 ℃. The products were characterized by X-ray diffraction (XRD), thermogravimetry and differential scanning calorimetry (TG-DSC) analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and selected-area electron diffraction (SAED). The results show that the nanowires are amorphous structures with diameters in the range of 100 to 150 nm. The photoluminescence (PL) spectrum of the silicon oxynitride nanowires shows a strong green light emission peaked at 563nm and a weak ultraviolet light emission at 289 nm under 220 nm excitation wavelength. The growth mechanism of the nanowires was proposed to vapor-liquid-solid (VLS) process.
