半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2006年
2期
229-234
,共6页
欧谷平%宋珍%桂文明%张福甲
歐穀平%宋珍%桂文明%張福甲
구곡평%송진%계문명%장복갑
原子力显微镜%X射线光电子能谱%PTCDA
原子力顯微鏡%X射線光電子能譜%PTCDA
원자력현미경%X사선광전자능보%PTCDA
AFM%XPS%PTCDA
利用X射线光电子能谱(XPS)对苝四甲酸二酐[3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA)]/铟锡氧化物(ITO)表面和界面进行了研究.用原子力显微镜(AFM)对PTCDA/ITO样品的表面形貌进行了分析.XPS表明,在原始表面的C1s精细谱存在两个主谱峰和一个伴峰,主谱峰分别由结合能为284.6eV的苝环中的C原子和结合能为288.7eV的酸酐基团中的C原子激发;而结合能为290.4eV的伴峰的存在,说明发生了来源于ITO膜中的氧对C原子的氧化现象.O原子在C=O键和C-O-C键的结合能分别为531.5和533.4eV.在界面处,C1s谱中较高结合能峰消失,且峰值向低结合能方向发生0.2eV的化学位移;O1s谱向低结合能方向发生1.5eV的化学位移.由此可以推断,在界面处PTCDA与ITO的结合是PTCDA中的苝环与ITO中的In空位的结合.AFM的结果显示,PTCDA薄膜为岛状结构,岛的直径约为100~300nm,表面起伏约为14nm.相邻两层PTC-DA分子由于存在离域大π键而交叠和PTCDA分子中的苝环与ITO的In空位的紧密结合是最终导致PTCDA岛状结构形成的原因.
利用X射線光電子能譜(XPS)對苝四甲痠二酐[3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA)]/銦錫氧化物(ITO)錶麵和界麵進行瞭研究.用原子力顯微鏡(AFM)對PTCDA/ITO樣品的錶麵形貌進行瞭分析.XPS錶明,在原始錶麵的C1s精細譜存在兩箇主譜峰和一箇伴峰,主譜峰分彆由結閤能為284.6eV的苝環中的C原子和結閤能為288.7eV的痠酐基糰中的C原子激髮;而結閤能為290.4eV的伴峰的存在,說明髮生瞭來源于ITO膜中的氧對C原子的氧化現象.O原子在C=O鍵和C-O-C鍵的結閤能分彆為531.5和533.4eV.在界麵處,C1s譜中較高結閤能峰消失,且峰值嚮低結閤能方嚮髮生0.2eV的化學位移;O1s譜嚮低結閤能方嚮髮生1.5eV的化學位移.由此可以推斷,在界麵處PTCDA與ITO的結閤是PTCDA中的苝環與ITO中的In空位的結閤.AFM的結果顯示,PTCDA薄膜為島狀結構,島的直徑約為100~300nm,錶麵起伏約為14nm.相鄰兩層PTC-DA分子由于存在離域大π鍵而交疊和PTCDA分子中的苝環與ITO的In空位的緊密結閤是最終導緻PTCDA島狀結構形成的原因.
이용X사선광전자능보(XPS)대패사갑산이항[3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA)]/인석양화물(ITO)표면화계면진행료연구.용원자력현미경(AFM)대PTCDA/ITO양품적표면형모진행료분석.XPS표명,재원시표면적C1s정세보존재량개주보봉화일개반봉,주보봉분별유결합능위284.6eV적패배중적C원자화결합능위288.7eV적산항기단중적C원자격발;이결합능위290.4eV적반봉적존재,설명발생료래원우ITO막중적양대C원자적양화현상.O원자재C=O건화C-O-C건적결합능분별위531.5화533.4eV.재계면처,C1s보중교고결합능봉소실,차봉치향저결합능방향발생0.2eV적화학위이;O1s보향저결합능방향발생1.5eV적화학위이.유차가이추단,재계면처PTCDA여ITO적결합시PTCDA중적패배여ITO중적In공위적결합.AFM적결과현시,PTCDA박막위도상결구,도적직경약위100~300nm,표면기복약위14nm.상린량층PTC-DA분자유우존재리역대π건이교첩화PTCDA분자중적패배여ITO적In공위적긴밀결합시최종도치PTCDA도상결구형성적원인.
The electronic states of the surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thin film are investigated using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) is also applied to investigate the pattern of PTCDA/ITO film. XPS results show that there are two main peaks, which are associated with C atoms in the perylene rings and acid anhydride groups,located at 284.6 and 288.7eV, respectively,in the C1s spectrum of the original surface. It can be deduced from the emergence of a small peak at 290.4eV in the C1s spectrum that some C atoms are oxidized by O atoms from ITO.The binding energies of O atoms in C=O bonds and C-O-C bonds are 531.5 and 533.4eV respectively. At the interface,the peak at the high binding energy in the C1s spectrum disappears,and the peak value shifts about 0.2eV to lower binding energy. There is a significant 1.5eV chemical shift to lower binding energy in the O1s spectrum. These observations indicate that perylene rings inside PTCDA molecules are combined with In vacancies in the ITO at the interface. The AFM results show that PTCDA molecules formed an island-like structure a height of about 14nm. The sizes of the crystal grains are about 100~300nm. The island-like pattern comes from the delocalized π bonds of adjacent molecules in PTCDA and the combination of vacancies in ITO with perylene rings at the PTCDA/ITO interface.