CAJ | 학술논문

研究了利用GaAs的双光子诱导吸收实现调Q激光脉冲展宽的原理,分析了GaAs 的光吸收特性,建立了激光器速率方程并给出了数值解。在实验上,将GaAs薄片放入一电光调Q Nd:YAG激光器谐振腔中,同理论预测一样,激光输出脉冲的能量、峰值功率都低于常规调Q激光脉冲,同时脉冲宽度得到了展宽。
연구료이용GaAs적쌍광자유도흡수실현조Q격광맥충전관적원리,분석료GaAs 적광흡수특성,건립료격광기속솔방정병급출료수치해。재실험상,장GaAs박편방입일전광조Q Nd:YAG격광기해진강중,동이론예측일양,격광수출맥충적능량、봉치공솔도저우상규조Q격광맥충,동시맥충관도득도료전관。
We have demonstrated the theory of utilizing internal two-photon-induced light absorption of semiconductor GaAs to accomplish Q-switched pulse lengthening. The rate equations are solved and the experiments are performed with an electrooptic Q-switching Nd:YAG laser with a GaAs sample in its cavity. As predicted by the theory that the output intensity and output energy both decrease and pulse length increases as compared with the normal Q-switched case. We were able to obtain pulses as long as 1～μs.