CAJ | 학술논문

提出了一种快速推算栅极氧化膜TDDB寿命的新方法.该方法可以用于对工艺的实时监控.通常情况下,为了得到栅极氧化膜在器件使用温度下的TDDB寿命,必须得到三个在一定温度下的不同电压下的TDDB寿命.然后使用一定模型(E模型或者1/E模型)和这个三个寿命推算出氧化膜在器件使用温度下的寿命.比较常用的是E模型.但是为了保证使用E模型推得的寿命的准确性,必须尽量使用较低电压下的寿命来推算想要的寿命.显然,为了获得低电压下的TDDB寿命,必须花费相当长的测试时间(甚至1个月).这对于工艺的实时监控来说,是不能接受的.文中提出一种新的推算栅氧化膜TDDB寿命的方法.运用该方法,可以快速、准确获得栅氧化膜的TDDB寿命,而花费的测试时间不到普通方法的1/1000000.在该方法中,巧妙地同时利用了1/E模型和E模型.
제출료일충쾌속추산책겁양화막TDDB수명적신방법.해방법가이용우대공예적실시감공.통상정황하,위료득도책겁양화막재기건사용온도하적TDDB수명,필수득도삼개재일정온도하적불동전압하적TDDB수명.연후사용일정모형(E모형혹자1/E모형)화저개삼개수명추산출양화막재기건사용온도하적수명.비교상용적시E모형.단시위료보증사용E모형추득적수명적준학성,필수진량사용교저전압하적수명래추산상요적수명.현연,위료획득저전압하적TDDB수명,필수화비상당장적측시시간(심지1개월).저대우공예적실시감공래설,시불능접수적.문중제출일충신적추산책양화막TDDB수명적방법.운용해방법,가이쾌속、준학획득책양화막적TDDB수명,이화비적측시시간불도보통방법적1/1000000.재해방법중,교묘지동시이용료1/E모형화E모형.
A method for fast gate oxide TDDB lifetime prediction for process control monitors (PCM) is proposed.For normal TDDB lifetime prediction at operation voltage and temperature, we must getthree lifetimes at relative low stress voltages and operation temperature. Then we use these three lifetimes to project the TDDB lifetime at operation voltage and temperature via the E-model. This requires a very long time for measurement. With our new method,it can be calculated quickly by projecting the TDDB lifetime at operation voltage and temperature with measurement data at relatively high stress voltages. Our test case indicates that this method is very effective. And the result with our new method is very close to that with the normal TDDB lifetime prediction method. But the measurement time is less than 50s for one sample, less than 1/100000 of that with the normal prediction method. With this new method,we can monitor gate oxide TDDB lifetime on-line.