CAJ | 학술논문

报道了采用MBE外延生长方法制备的叠层阵列CW工作型高功率半导体激光器.激光器的生长结构采用经过优化的单量子阱渐变折射率分别限制波导结构,激光器芯片结构为标准的CM条,注入因子设计为60%.叠层装配采用了具有高效散热能力的水冷结构.经初步测试,叠层器件的阈值电流为12 A,直流30 A驱动电流下的输出功率达40 W,斜率效率为2.2 W/A.器件中心激射波长为810 nm,光谱宽度(FWHM)为6 nm.
보도료채용MBE외연생장방법제비적첩층진렬CW공작형고공솔반도체격광기.격광기적생장결구채용경과우화적단양자정점변절사솔분별한제파도결구,격광기심편결구위표준적CM조,주입인자설계위60%.첩층장배채용료구유고효산열능력적수랭결구.경초보측시,첩층기건적역치전류위12 A,직류30 A구동전류하적수출공솔체40 W,사솔효솔위2.2 W/A.기건중심격사파장위810 nm,광보관도(FWHM)위6 nm.
High power semiconductor laser stack arrays, grown by MBE have been prepared. The epitaxial structure for LD is an optimized SQW GRIN SCH structure, and cm bars are made with a fill factor of 60%. A LD stack assembly with water cooling is formed to obtain an effective heat delivery ability. The following results are preliminarily obtained: Ith of the stack lasers is 12 A, CW output power can reach to 40 W at 30 A; FWHM of the lasing spectrum is 6 nm with a central wavelength of 810 nm, and the slope efficiency (ηs) is 2.2 W/A.