稀有金属材料与工程
稀有金屬材料與工程
희유금속재료여공정
RARE METAL MATERIALS AND ENGINEERNG
2010年
1期
10-16
,共7页
谭澄宇%崔航%胡炜%刘宇%郑子樵
譚澄宇%崔航%鬍煒%劉宇%鄭子樵
담징우%최항%호위%류우%정자초
Ni-Al_2O_3薄膜%电结晶成核%共沉积%I-t%曲线
Ni-Al_2O_3薄膜%電結晶成覈%共沉積%I-t%麯線
Ni-Al_2O_3박막%전결정성핵%공침적%I-t%곡선
Ni-Al_2O_3 film%electrocrystallization nucleation%co-deposition%I-t curve
利用循环伏安(CV)、计时安培(CA)和电化学阻抗(EIS)研究了纳米Al_2O_3颗粒在不同电位(vs. SCE)下对Ni自硫酸盐镀液在铜基体上电沉积的影响.结果表明,Ni-Al_2O_3体系共沉积的起始电位为:-740 mV左右;在不同的电位下,纳米-Al_2O_3颗粒对镍沉积过程的影响有所差别;在电位-740~ -830 mV范围,与纯Ni沉积相比较,Ni-Al_2O_3体系沉积的峰电流所对应的孕育期tm明显缩短,反映Al_2O_3颗粒在阴极表面有利于镍沉积成核,且促进了电结晶成核.Al_2O_3颗粒吸附在阴极表面可能会阻碍部分离子电荷放电和物质传输过程,尤其在电位-250~ -650 mV范围,致使Ni-Al_2O_3体系沉积阻抗增加.在较高的过电位下,Al_2O_3颗粒的促进作用有所减弱,许多颗粒堆积在电极表面上还可能减小Ni-Al_2O_3沉积的还原反应电流.在电位-890 mV,Ni-Al_2O_3体系电沉积初期阶段的成核过程基本遵循三维的Scharifker-Hill瞬时成核模式.
利用循環伏安(CV)、計時安培(CA)和電化學阻抗(EIS)研究瞭納米Al_2O_3顆粒在不同電位(vs. SCE)下對Ni自硫痠鹽鍍液在銅基體上電沉積的影響.結果錶明,Ni-Al_2O_3體繫共沉積的起始電位為:-740 mV左右;在不同的電位下,納米-Al_2O_3顆粒對鎳沉積過程的影響有所差彆;在電位-740~ -830 mV範圍,與純Ni沉積相比較,Ni-Al_2O_3體繫沉積的峰電流所對應的孕育期tm明顯縮短,反映Al_2O_3顆粒在陰極錶麵有利于鎳沉積成覈,且促進瞭電結晶成覈.Al_2O_3顆粒吸附在陰極錶麵可能會阻礙部分離子電荷放電和物質傳輸過程,尤其在電位-250~ -650 mV範圍,緻使Ni-Al_2O_3體繫沉積阻抗增加.在較高的過電位下,Al_2O_3顆粒的促進作用有所減弱,許多顆粒堆積在電極錶麵上還可能減小Ni-Al_2O_3沉積的還原反應電流.在電位-890 mV,Ni-Al_2O_3體繫電沉積初期階段的成覈過程基本遵循三維的Scharifker-Hill瞬時成覈模式.
이용순배복안(CV)、계시안배(CA)화전화학조항(EIS)연구료납미Al_2O_3과립재불동전위(vs. SCE)하대Ni자류산염도액재동기체상전침적적영향.결과표명,Ni-Al_2O_3체계공침적적기시전위위:-740 mV좌우;재불동적전위하,납미-Al_2O_3과립대얼침적과정적영향유소차별;재전위-740~ -830 mV범위,여순Ni침적상비교,Ni-Al_2O_3체계침적적봉전류소대응적잉육기tm명현축단,반영Al_2O_3과립재음겁표면유리우얼침적성핵,차촉진료전결정성핵.Al_2O_3과립흡부재음겁표면가능회조애부분리자전하방전화물질전수과정,우기재전위-250~ -650 mV범위,치사Ni-Al_2O_3체계침적조항증가.재교고적과전위하,Al_2O_3과립적촉진작용유소감약,허다과립퇴적재전겁표면상환가능감소Ni-Al_2O_3침적적환원반응전류.재전위-890 mV,Ni-Al_2O_3체계전침적초기계단적성핵과정기본준순삼유적Scharifker-Hill순시성핵모식.
The influence of nano-Al_2O_3 particles on nickel deposition on copper matrix from acid sulphate solution was studied under various potentials (vs. SCE) by cyclic voltammetry (CV), chronoamperometry (CA) and electrochemical impedance spectroscopy (EIS). The results show that the beginning potential of Ni-Al_2O_3 co-deposition is at -740 mV or so. The effect of nano-Al_2O_3 particles on nickel deposition process may be different under various potentials. In the potentials range from -740 to -830 mV, Al_2O_3 particles on cathode surface may be favorable for nickel deposition nucleation and promote electron crystallization nucleation because the induction period tm corresponding to the peak current of Ni-Al_2O_3 co-deposition is apparently shortened, compared with that of pure Ni deposition. However, Al_2O_3 particles adsorbed on cathode surface may obstruct electric discharge of partial ions and mass transmission process, resulting in the impedance increment of Ni-Al_2O_3 co-deposition, especially in the potentials range from -250 to -650 mV. The favorable effect of Al_2O_3 particles weaken in the range of high over potential, and the particles accumulated on electrode surface will decrease the reduction current of Ni-Al_2O_3 deposition. At the potential -890 mV, the nucleation process of Ni-Al_2O_3 co-deposition at initial stage follows the instantaneous model of Scharifker-Hill with three-dimensional fashion.