CAJ | 학술논문

在没有催化剂的情况下,空气中直接加热氧化锌片成功制备出ZnO纳米线/纳米片.通过改变反应温度,分别能够获得紧密排列的ZnO纳米线和纳米片.ZnO纳米线和纳米片的直径为几个微米,厚度约为280 nm.室温光致发光测试研究表明其最大可见发射波长在508 nm.该研究工作为纳米器件研制提供了一种简单直接氧化方法,可望高产率制备高质量半导体纳米线和纳米片阵列.
재몰유최화제적정황하,공기중직접가열양화자편성공제비출ZnO납미선/납미편.통과개변반응온도,분별능구획득긴밀배렬적ZnO납미선화납미편.ZnO납미선화납미편적직경위궤개미미,후도약위280 nm.실온광치발광측시연구표명기최대가견발사파장재508 nm.해연구공작위납미기건연제제공료일충간단직접양화방법,가망고산솔제비고질량반도체납미선화납미편진렬.
ZnO micro/nsnostructures were successfully synthesized without catalyst by direct oxidation of zinc substrate in air. By changing the reaction temperature, ZnO micro/nanosheets were obtained respectively of high density nanoflakc and nanoshects arrays. The diameter of ZnO micro/nanoflake is several micrometers,and the thickness of the micro/nanoshcets is about 280 nm. Room temperature photoluminescence measure-ments reveal a visible emission at 508 nm. The present work highlights the promise of the simple direct oxida-tion process in the high-yield synthesis of high quality semiconductor nanoflake arrays and micro/nanosheets for micro/nano-deviees.