人工晶体学报
人工晶體學報
인공정체학보
2010年
6期
1353-1358
,共6页
焦志伟%张文林%沈德忠%王晓青%沈光球
焦誌偉%張文林%瀋德忠%王曉青%瀋光毬
초지위%장문림%침덕충%왕효청%침광구
Cd3Zn3B4O12%顶端籽晶法%助熔剂
Cd3Zn3B4O12%頂耑籽晶法%助鎔劑
Cd3Zn3B4O12%정단자정법%조용제
Cd3Zn3B4O12%top seeded solution grown method%flux agent
本文以PbO-0.25B2O3为助熔剂,利用顶部籽晶法获得了较大块的Cd3Zn3B4O12单晶.透过率测试结果显示该晶体的紫外截止波长位于310 nm处.利用Kurtz-Perry的方法对晶体的倍频效应进行了测试,结果显示该晶体的粉末倍频效应约为KDP的5倍,且能实现相位匹配.晶体的光损伤阈值约为840 MW(1064 nm,10 ns).该晶体的热分析结果显示Cd3Zn3B4O12晶体在熔点温度以上会产生分解,这也是阻碍高质量大块Cd3Zn3B4O12晶体生长最主要的因素.
本文以PbO-0.25B2O3為助鎔劑,利用頂部籽晶法穫得瞭較大塊的Cd3Zn3B4O12單晶.透過率測試結果顯示該晶體的紫外截止波長位于310 nm處.利用Kurtz-Perry的方法對晶體的倍頻效應進行瞭測試,結果顯示該晶體的粉末倍頻效應約為KDP的5倍,且能實現相位匹配.晶體的光損傷閾值約為840 MW(1064 nm,10 ns).該晶體的熱分析結果顯示Cd3Zn3B4O12晶體在鎔點溫度以上會產生分解,這也是阻礙高質量大塊Cd3Zn3B4O12晶體生長最主要的因素.
본문이PbO-0.25B2O3위조용제,이용정부자정법획득료교대괴적Cd3Zn3B4O12단정.투과솔측시결과현시해정체적자외절지파장위우310 nm처.이용Kurtz-Perry적방법대정체적배빈효응진행료측시,결과현시해정체적분말배빈효응약위KDP적5배,차능실현상위필배.정체적광손상역치약위840 MW(1064 nm,10 ns).해정체적열분석결과현시Cd3Zn3B4O12정체재용점온도이상회산생분해,저야시조애고질량대괴Cd3Zn3B4O12정체생장최주요적인소.
Nonlinear optical crystal Cd3Zn3B4O12 was obtained by top seeded solution growth (TSSG) method using PbO-0.25B2O3 as flux. Transmission spectrum shows the UV cutoff for the as-grown crystal is about 310 nm. Second-harmonic generation (SHG) property measured by the Kurtz-Perry method indicates that Cd3Zn3B4O12 crystal could be phase matchable and the SHG efficiency is about 5 times as large as that of KDP. The surface damage threshold of the crystal is 840 MW/cm2 at 1064 nm for 10 ns. Differential thermal analysis confirms that Cd3Zn3B4O12 tends to decompose upon its melting point, which is the major factor constraint to grow high quality Cd3Zn3B4O12 crystal.