电子显微学报
電子顯微學報
전자현미학보
JOURNAL OF CHINESE ELECTRON MICROSCOPY SOCIETY
2006年
3期
208-213
,共6页
半导体量子点%光电性质%透射电子显微术%电子能量损失谱
半導體量子點%光電性質%透射電子顯微術%電子能量損失譜
반도체양자점%광전성질%투사전자현미술%전자능량손실보
semiconductor quantum dot%opto-electronic property%transmission electron microscopy%electron energy loss spectrum
半导体量子点应用于许多关键的现代科学技术中.量子点的尺寸和成分对决定量子点光电性质十分重要.由于量子点的尺寸很小,表征量子点的成分及其分布是一项很有挑战性的任务.本文综述了能量过滤透射电子显微术如何应用于量子点成分的研究.
半導體量子點應用于許多關鍵的現代科學技術中.量子點的呎吋和成分對決定量子點光電性質十分重要.由于量子點的呎吋很小,錶徵量子點的成分及其分佈是一項很有挑戰性的任務.本文綜述瞭能量過濾透射電子顯微術如何應用于量子點成分的研究.
반도체양자점응용우허다관건적현대과학기술중.양자점적척촌화성분대결정양자점광전성질십분중요.유우양자점적척촌흔소,표정양자점적성분급기분포시일항흔유도전성적임무.본문종술료능량과려투사전자현미술여하응용우양자점성분적연구.
Semiconductor quantum dots have potential applications in many key areas of modern technology. The dimension and composition of quantum dots are very important in determining the opto-electronic properties of the quantum dots. However, the characterization of quantum dot composition profiles is a very challenging task because of small quantum dot sizes. In this papers,we review how energy-filtered transmission electron microscopy is applied to the investigation of quantum dot composition.
