CAJ | 학술논문

介绍了针对利用原位水汽生成工艺制作的超薄栅介质膜的电学特性研究.通过电荷泵和栅极隧穿漏电流的测试,证明了原位水汽生成工艺相比传统炉管氧化工艺能够有效地提高界面态特性,这种电学特性上的提高被认为与活性氧原子的氧化机制有关.同时,通过测试还发现提高生长温度和减小H2在反应气体中的比重可以获得更好的电特性,这也指明了原位水汽生长工艺存在进一步提高的可能.
개소료침대이용원위수기생성공예제작적초박책개질막적전학특성연구.통과전하빙화책겁수천루전류적측시,증명료원위수기생성공예상비전통로관양화공예능구유효지제고계면태특성,저충전학특성상적제고피인위여활성양원자적양화궤제유관.동시,통과측시환발현제고생장온도화감소H2재반응기체중적비중가이획득경호적전특성,저야지명료원위수기생장공예존재진일보제고적가능.
The electrical characteristics of MOSFETs with gate dielectrics fabricated by ISSG (in-situ steam generation) process were investigated. The measurement results of charge pumping and gate tunneling leakage current in depletion region have demonstrated an improvement on interface-state property for ISSG in comparison with conventional furnace oxidation technique. This improvement on electrical property is considered to arise from the atomic Oxygen (O*) oxidation mechanism of ISSG. It is also found that increasing process temperature and decreasing H2 fraction in mixed reaction gas could lead to better electrical performance indicating a broader exploring space for ISSG process.