CAJ | 학술논문

利用自主研制的SiC衬底的栅宽为2.5 mm的AlGaN/GaN HEMT器件,设计完成了单级X波段氮化镓固态放大器模块.模块由AlGaN/GaN HEMT器件、偏置电路和微带匹配电路构成.采用金属腔体和测试夹具,保证在连续波下具有良好的接地和散热性能.利用双偏置电路馈电,并且采用独特的电容电阻网络和栅极串联电阻消除了低频和射频振荡.利用微带短截线完成了器件的输入输出匹配.在8GHZ频率及连续波情况下(直流偏置电压为V_(ds)=27V,U_(gs)=-4.0V),放大器线性增益为5.6 dB,最大效率为30.5%,输出功率最大可达40.25 dBm(10.5W),此时增益压缩为2 dB.在带宽为500 MHz内,输出功率变化为1 dB.
이용자주연제적SiC츤저적책관위2.5 mm적AlGaN/GaN HEMT기건,설계완성료단급X파단담화가고태방대기모괴.모괴유AlGaN/GaN HEMT기건、편치전로화미대필배전로구성.채용금속강체화측시협구,보증재련속파하구유량호적접지화산열성능.이용쌍편치전로궤전,병차채용독특적전용전조망락화책겁천련전조소제료저빈화사빈진탕.이용미대단절선완성료기건적수입수출필배.재8GHZ빈솔급련속파정황하(직류편치전압위V_(ds)=27V,U_(gs)=-4.0V),방대기선성증익위5.6 dB,최대효솔위30.5%,수출공솔최대가체40.25 dBm(10.5W),차시증익압축위2 dB.재대관위500 MHz내,수출공솔변화위1 dB.
Based on the self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on the SiC substrate,the X-band GaN solid-state power amplifier module is fabricated.The module consists of the AlGaN/GaN HEMT,DC-bias circuit and microstrip line.The chamber structure made of metal and the test fixture are designed for grounding and thermal transmission under the CW operating condition.Two section bias circuits for the AlGaN/GaN HEMT are presented.The special R-C networks and gate resistance are used for cancellation of self-oscillation at both the low frequency and radio frequency.The microstrip stubs are used for input matching and output matching.Under the V_(ds)=27 V,V_(gs)=-4.0 VCW operating condition at 8 GHz.the amplifier module exhibits a line gain of 5.6 dB with a power-added efficiency of 30.5%,the output power of 40.25 dBm(10.5 W),and the power gain compression of 2 dB. Between 8 GHz and 8.5 GHz,the variation of output power is 1 dB.