CAJ | 학술논문

通过射频磁控溅射的方法制备了Ta掺杂SnO2薄膜，研究了薄膜的结构和低温下电阻率随磁场的变化规律. 测量表明低温下呈现出负的磁电阻，但是，二维、三维弱局域理论均不能解释样品中出现的负的磁电阻现象. 综合考虑了三阶微绕近似的s-d交换哈密顿的半经验公式△ρ/ρ=-B1^2ln（1＋BH））和双能带模型的相关公式Δρ/ρ=B3^2H/（1＋BH）拟合了样品在5 T以下的磁电阻的数据，理论和实验符合得很好．结果表明Ta掺杂SnO2薄膜中的磁电阻源于局域磁矩的传导电子散射．
통과사빈자공천사적방법제비료Ta참잡SnO2박막，연구료박막적결구화저온하전조솔수자장적변화규률. 측량표명저온하정현출부적자전조，단시，이유、삼유약국역이론균불능해석양품중출현적부적자전조현상. 종합고필료삼계미요근사적s-d교환합밀돈적반경험공식△ρ/ρ=-B1^2ln（1＋BH））화쌍능대모형적상관공식Δρ/ρ=B3^2H/（1＋BH）의합료양품재5 T이하적자전조적수거，이론화실험부합득흔호．결과표명Ta참잡SnO2박막중적자전조원우국역자구적전도전자산사．
Tantalum-doped Tin oxide thin films were prepared by RF magnetron sputtering method and their structura and low temperature magnetotransport properties were investigated. The magnetotransport properties measurement show negative magnetoresistance at all measuring temperatures. We fitted the magnetoresistance data of the samples with synthesized semiempirical expression △ρ/ρ=-B1^2ln（1＋BH）） and Two band modle equation Δρ/ρ=B3^2H/（1＋BH） The theory and experiment are in excellent agreement. This strongly suggests that the magnetoresistance in SnO2：Ta film originates from the scattering of conduction electrons due to localized magnetic moments.