CAJ | 학술논문

在不同的化学配比条件下制备了半绝缘磷化铟材料,其中包括配比和富铟熔体中的铁掺杂以及磷气氛和磷化铁气氛下高温退火非掺杂晶片.在这些半绝缘磷化铟材料中检测到了与非化学配比有关的深能级缺陷.通过对大量的原生掺铁和非掺退火半绝缘磷化铟材料中的缺陷的研究,发现原生深能级缺陷与材料的电学参数质量密切相关.迁移率低、热稳定性差的掺铁半绝缘磷化铟材料中有大量的能级位于0.1～0.4eV之间的缺陷.高温退火非掺磷化铟抑制了这些缺陷的产生,获得了迁移率高、均匀性好的高质量半绝缘材料.根据这些结果,我们提出了一种通过控制化学配比制备高质量半绝缘磷化铟材料的方法.
재불동적화학배비조건하제비료반절연린화인재료,기중포괄배비화부인용체중적철참잡이급린기분화린화철기분하고온퇴화비참잡정편.재저사반절연린화인재료중검측도료여비화학배비유관적심능급결함.통과대대량적원생참철화비참퇴화반절연린화인재료중적결함적연구,발현원생심능급결함여재료적전학삼수질량밀절상관.천이솔저、열은정성차적참철반절연린화인재료중유대량적능급위우0.1～0.4eV지간적결함.고온퇴화비참린화인억제료저사결함적산생,획득료천이솔고、균균성호적고질량반절연재료.근거저사결과,아문제출료일충통과공제화학배비제비고질량반절연린화인재료적방법.
Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, including Fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. Deep level defects related with non-stoichiometry have been detected in the SI-InP samples. A close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown Fe-doped and annealed undoped SI-InP materials. Fe-doped SI-InP material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4eV. The suppression of the defects by high temperature annealing undoped InP leads to the manufacture of high quality SI-InP with high mobility and good electrical uniformity. A technology for the growth of high quality SI-InP through stoichiometry control has been proposed based on the results.