CAJ | 학술논문

报道了一种基于商用0.15um赝配高电子迁移率晶体管工艺的单片低噪声放大器,工作频率范围为23~36GHz.它采用自偏置结构.对晶体管栅宽进行了优化设计减小栅极电阻,以得到低的噪声系数.采用吸收回路和加电阻电容网络的直流偏置结构提高电路稳定性,用多谐振点方法和负反馈技术扩展带宽.测试结果表明,其噪声系数低于2.0dB,在31GHz处,噪声系数仅为1.6dB.在整个工作频带范崮内,增益大于26dB,输入回波损耗大于11dB,输出回波损耗大于13dB.36GHz处的ldB压缩点输出功率为14dBm.芯片尺寸为2.4mm×1mm.
보도료일충기우상용0.15um안배고전자천이솔정체관공예적단편저조성방대기,공작빈솔범위위23~36GHz.타채용자편치결구.대정체관책관진행료우화설계감소책겁전조,이득도저적조성계수.채용흡수회로화가전조전용망락적직류편치결구제고전로은정성,용다해진점방법화부반궤기술확전대관.측시결과표명,기조성계수저우2.0dB,재31GHz처,조성계수부위1.6dB.재정개공작빈대범고내,증익대우26dB,수입회파손모대우11dB,수출회파손모대우13dB.36GHz처적ldB압축점수출공솔위14dBm.심편척촌위2.4mm×1mm.
A four-stage monolithic microwave integrated circuits(MMIC)low noise amplifier(LNA)operating from 23 to 36GHz is reported using commercially available 0.15um PHEMT technology.The LNA is self-biased.To achieve a low noise characteristic,careful optimizations of gate width are performed to reduce gate resistance.Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability.Multiple resonance points and negative feedback technologies are used to widen the bandwidth.Measurements show a noise figure(NF)of less than 2.OdB,and the lowest NF is only 1.6dB at a frequency of 31GHz.In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 1 1 and 13dB,respectively.The output power at ldB compression gain of 36GHz is about 14dBm.The chip area is 2.4mm×1mm.