红外与毫米波学报
紅外與毫米波學報
홍외여호미파학보
JOURNAL OF INFRARED AND MILLIMETER WAVES
2005年
2期
81-83
,共3页
吴俊%徐非凡%巫艳%陈路%于梅芳%何力
吳俊%徐非凡%巫豔%陳路%于梅芳%何力
오준%서비범%무염%진로%우매방%하력
砷掺杂%退火%分子束外延%碲镉汞
砷摻雜%退火%分子束外延%碲鎘汞
신참잡%퇴화%분자속외연%제력홍
As doping%anneal%MBE%HgCdTe
报道了利用As4作为掺杂源获得原位As掺杂MBE HgCdTe材料的研究结果.利用高温退火技术激活As使其占据Te位形成受主.对原位As掺杂MBE HgCdTe材料进行SIMS及Hall测试,证实利用原位As掺杂及高温退火可获得P型MBE HgCdTe材料.
報道瞭利用As4作為摻雜源穫得原位As摻雜MBE HgCdTe材料的研究結果.利用高溫退火技術激活As使其佔據Te位形成受主.對原位As摻雜MBE HgCdTe材料進行SIMS及Hall測試,證實利用原位As摻雜及高溫退火可穫得P型MBE HgCdTe材料.
보도료이용As4작위참잡원획득원위As참잡MBE HgCdTe재료적연구결과.이용고온퇴화기술격활As사기점거Te위형성수주.대원위As참잡MBE HgCdTe재료진행SIMS급Hall측시,증실이용원위As참잡급고온퇴화가획득P형MBE HgCdTe재료.
The study on As4-doped HgCdTe epilayers grown by MBE was presented. The electrical activation of arsenic impurities was achieved by annealing that caused As to occupy Te sites. By using the secondary ion mass spectrometry (SIMS) and Hall measurements on the in situ arsenic doped HgCdTe epilayers, the results show that P-type MBE HgCdTe can be obtained by doping with As4 source and annealing with high temperature.
