利用MOCVD在r面蓝宝石上生长的α面GaN中两步AlN缓冲层的优化
이용MOCVD재r면람보석상생장적α면GaN중량보AlN완충층적우화
Optimization of Two-step AIN Buffer of α-plane GaN Films Grown on r-plane Sapphire by MOCVD
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    发光学报 발광학보
    CHINESE JOURNAL OF LUMINESCENCE
    2011年 4期 363-367 ,共5页

    何涛%陈耀%李辉%戴隆贵%王小丽%徐培强%王文新%陈弘

    하도%진요%리휘%대륭귀%왕소려%서배강%왕문신%진홍

    GaN%各向异性%X射线衍射%AlN%缓冲层 GaN%各嚮異性%X射線衍射%AlN%緩遲層
    GaN%각향이성%X사선연사%AlN%완충층
    GaN%anisotropy%XRD%AIN%buffer layer
    采用两步AlN缓冲层(一层低温AlN和一层高温AlN)在r面蓝宝石衬底上生长了非极性的α面GaN,并利用高分辨X射线衍射和光致荧光谱对所生长的材料进行了研究.两步AIN缓冲层在我们之前的工作中已被证明比单步高温AlN或低温GaN缓冲层更有利于减小材料各向异性和提高晶体质量,本文进一步优化了两步AlN缓冲层的结构,并得到了各向异性更小,晶体质量更好的α面GaN薄膜.分析表明,两步AlN缓冲层中的低温AlN层在减小各向异性中起着关键作用.低温AlN层能抑制了优势方向(c轴)的原子迁移,有利于劣势方向(m轴)的原子迁移,从而减小了Al原子在不同方向迁移能力的差异,并为其后的高温AlN缓冲层和GaN层提供"生长模板",以得到各向异性更小、晶体质量更好的α面GaN材料.
    채용량보AlN완충층(일층저온AlN화일층고온AlN)재r면람보석츤저상생장료비겁성적α면GaN,병이용고분변X사선연사화광치형광보대소생장적재료진행료연구.량보AIN완충층재아문지전적공작중이피증명비단보고온AlN혹저온GaN완충층경유리우감소재료각향이성화제고정체질량,본문진일보우화료량보AlN완충층적결구,병득도료각향이성경소,정체질량경호적α면GaN박막.분석표명,량보AlN완충층중적저온AlN층재감소각향이성중기착관건작용.저온AlN층능억제료우세방향(c축)적원자천이,유리우열세방향(m축)적원자천이,종이감소료Al원자재불동방향천이능력적차이,병위기후적고온AlN완충층화GaN층제공"생장모판",이득도각향이성경소、정체질량경호적α면GaN재료.
    Nonpolar (11(2)0) a-plane GaN films with two-step AIN buffer(a low-temperature (LT) and a high-temperature (HT) AlN layers) were grown on (1(1)02) r-plane sapphire by metalorganic chemical vapor deposition (MOCYD). The as-grown films were investigated by high-resolution X-ray diffraction (XRD) and photoluminescence (PL). The two-step AlN buffer has been proved to be advantageous in crystal quality compared with one-step LT-GaN or HT-AlN buffers in our early works. In this report, the thickness of the two-step buffer was further optimized, and much less anisotropic a-plane GaN flms were achieved. It was found that the LT-AIN layer of the two-step buffer played a key role in reduction of anisotropy of the GaN film grown.
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