CAJ | 학술논문

提出一种新型全耗尽双栅MOSFET,该器件具有异质栅和LDD结构.异质栅由主栅和两个侧栅组成,分区控制器件的沟道表面势垒.通过Tsuprem-4工艺模拟和Medici器件模拟验证表明,与普通双栅全耗尽SOI相比,该器件获得了更好的开态/关态电流比和亚阈值斜率.在0.18μm工艺下,开态/关态电流比约为1010,亚阈值斜率接近60mV/dec.
제출일충신형전모진쌍책MOSFET,해기건구유이질책화LDD결구.이질책유주책화량개측책조성,분구공제기건적구도표면세루.통과Tsuprem-4공예모의화Medici기건모의험증표명,여보통쌍책전모진SOI상비,해기건획득료경호적개태/관태전류비화아역치사솔.재0.18μm공예하,개태/관태전류비약위1010,아역치사솔접근60mV/dec.
A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate,which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SOI MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 100 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process.