固体电子学研究与进展
固體電子學研究與進展
고체전자학연구여진전
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS
2010年
1期
150-154
,共5页
基态施主能级分裂%碳化硅%金属氧化物半导体电容%电容-电压特性%表面电荷
基態施主能級分裂%碳化硅%金屬氧化物半導體電容%電容-電壓特性%錶麵電荷
기태시주능급분렬%탄화규%금속양화물반도체전용%전용-전압특성%표면전하
valley-orbit splitting%SiC%MOS capacitor%C-V characteristics%surface charge
基态施主能级分裂因素被引入了SiC基MOS电容模型.考虑到能级分裂后,电容C-V特性曲线平带附近的Kink效应,得到有效减弱;并且能级分裂对C-V特性的影响,随掺杂浓度的增加和温度的降低而增强,同时也与杂质能级深度相关.对于耗尽区和弱积累区,由于能级分裂的影响,电容的表面电荷面密度将分别有所增加和降低.
基態施主能級分裂因素被引入瞭SiC基MOS電容模型.攷慮到能級分裂後,電容C-V特性麯線平帶附近的Kink效應,得到有效減弱;併且能級分裂對C-V特性的影響,隨摻雜濃度的增加和溫度的降低而增彊,同時也與雜質能級深度相關.對于耗儘區和弱積纍區,由于能級分裂的影響,電容的錶麵電荷麵密度將分彆有所增加和降低.
기태시주능급분렬인소피인입료SiC기MOS전용모형.고필도능급분렬후,전용C-V특성곡선평대부근적Kink효응,득도유효감약;병차능급분렬대C-V특성적영향,수참잡농도적증가화온도적강저이증강,동시야여잡질능급심도상관.대우모진구화약적루구,유우능급분렬적영향,전용적표면전하면밀도장분별유소증가화강저.
The valley-orbit splitting is introduced into the silicon carbide based MOS capacitor model. Under the influence of the valley-orbit splitting, the kink effect about the flat-band voltage on the C-V curves was decreased. In addition, the influence of the valley-orbit splitting on the C-V characteristics got higher with the doping concentration increasing or the temperature decreasing, and it related to the donor energy level too. The surface charge density in depletion mode was increased, and in weak inversion mode was reduced under the influence of the valley-orbit splitting.
