半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2009年
8期
770-774
,共5页
杨兵初%陈海平%曾礼丽%赵峥
楊兵初%陳海平%曾禮麗%趙崢
양병초%진해평%증례려%조쟁
直流磁控溅射%类金刚石薄膜%微观结构%结合能
直流磁控濺射%類金剛石薄膜%微觀結構%結閤能
직류자공천사%류금강석박막%미관결구%결합능
direct current magnetron sputtering%diamond-like carbon film%micmstructure%binding energyEEACC: 2550
采用直流磁控溅射法,在光学玻璃衬底上沉积类金刚石(DLC)和掺N类金刚石薄膜(DLC:N).用喇曼光谱、X射线光电子能谱(XPS)、傅里叶红外光谱(FTIR)等研究分析了所制备薄膜的微观结构.喇曼光谱的结果表明,掺N类金刚石膜仍具有典型的类金刚石膜结构,在类金刚石薄膜中掺N不仅有助于提高膜中sp3/sp2的比例,而且还能阻止sp2键向石墨相的转化,稳定并优化薄膜的类金刚石属性.FTIR表明,薄膜中N与C原子形成了C-N、C=N及C≡N等键合方式.XPS谱表明,掺N类金刚石膜中除了C和N元素外,还出现了少量的O元素,而C1s和N1s的解谱显示,掺N后的类金刚石膜中的C、N结合能发生了明显的移动,由计算得出薄膜中N的含量为13.5%.薄膜的表面形貌图(AFM)表明,在类金刚石薄膜中掺N能够改善其表面形貌.
採用直流磁控濺射法,在光學玻璃襯底上沉積類金剛石(DLC)和摻N類金剛石薄膜(DLC:N).用喇曼光譜、X射線光電子能譜(XPS)、傅裏葉紅外光譜(FTIR)等研究分析瞭所製備薄膜的微觀結構.喇曼光譜的結果錶明,摻N類金剛石膜仍具有典型的類金剛石膜結構,在類金剛石薄膜中摻N不僅有助于提高膜中sp3/sp2的比例,而且還能阻止sp2鍵嚮石墨相的轉化,穩定併優化薄膜的類金剛石屬性.FTIR錶明,薄膜中N與C原子形成瞭C-N、C=N及C≡N等鍵閤方式.XPS譜錶明,摻N類金剛石膜中除瞭C和N元素外,還齣現瞭少量的O元素,而C1s和N1s的解譜顯示,摻N後的類金剛石膜中的C、N結閤能髮生瞭明顯的移動,由計算得齣薄膜中N的含量為13.5%.薄膜的錶麵形貌圖(AFM)錶明,在類金剛石薄膜中摻N能夠改善其錶麵形貌.
채용직류자공천사법,재광학파리츤저상침적류금강석(DLC)화참N류금강석박막(DLC:N).용나만광보、X사선광전자능보(XPS)、부리협홍외광보(FTIR)등연구분석료소제비박막적미관결구.나만광보적결과표명,참N류금강석막잉구유전형적류금강석막결구,재류금강석박막중참N불부유조우제고막중sp3/sp2적비례,이차환능조지sp2건향석묵상적전화,은정병우화박막적류금강석속성.FTIR표명,박막중N여C원자형성료C-N、C=N급C≡N등건합방식.XPS보표명,참N류금강석막중제료C화N원소외,환출현료소량적O원소,이C1s화N1s적해보현시,참N후적류금강석막중적C、N결합능발생료명현적이동,유계산득출박막중N적함량위13.5%.박막적표면형모도(AFM)표명,재류금강석박막중참N능구개선기표면형모.
Diamond-like carbon (DLC) film and N-doped diamond-like carbon (DLC:N) film were deposited on optical glass by direct current magnetron sputtering. Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to analyze the microstructures of the DLC : N film. Raman spectra shows that the DLC : N film still has typical structure of DLC films and that introducing N2 into DLC films, it contributes to enhancing the ratio of sp3/sp2 in DLC films, and prevents sp2 from changing to graphite phase. The FTIR spectra reveals that N atoms in the films are found combined with carbon atoms as C-N, C=N and C≡N bonds. XPS spectra shows that a little oxygen exists in the DLC: N film together with visible carbon and nitrogen, and Gaussian fittings curves of C1s and N1s imply that the binding energy of C atoms and N atoms moves obviously, The quantitative calculations reveal that the N content in DLC:N films is 13.5%. The AFM shows that doping N into DLC films helps improving their surfaces.