半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
5期
458-461
,共4页
毫米波%Ka频段%波导%微带%过渡
毫米波%Ka頻段%波導%微帶%過渡
호미파%Ka빈단%파도%미대%과도
millimeter wave%Ka-band%waveguide%microstrip%transition
介绍了一种新颖的、适用于毫米波频段的矩形波导-微带过渡电路结构.该过渡电路具有插入损耗低、频带宽、重复性好的特性.其矩形波导E面相对于微带电路面,以及电磁信号传输方向的位置与脊波导-微带过渡相同.该过渡电路的微带线与波导的转换部分采用非接触式结构,并设计了可调节元件,从而在有一定加工误差的条件下改善其产品传输特性.利用高频仿真软件CST,在Ka频段进行了优化仿真,并对利用其优化值所设计的一对背靠背的电路实物进行了测试,在32~40 GHz的频率范围内,插入损耗小于2.36 dB,回波损耗大于7.22 dB;在整个Ka频段内,插入损耗小于3.49 dB.
介紹瞭一種新穎的、適用于毫米波頻段的矩形波導-微帶過渡電路結構.該過渡電路具有插入損耗低、頻帶寬、重複性好的特性.其矩形波導E麵相對于微帶電路麵,以及電磁信號傳輸方嚮的位置與脊波導-微帶過渡相同.該過渡電路的微帶線與波導的轉換部分採用非接觸式結構,併設計瞭可調節元件,從而在有一定加工誤差的條件下改善其產品傳輸特性.利用高頻倣真軟件CST,在Ka頻段進行瞭優化倣真,併對利用其優化值所設計的一對揹靠揹的電路實物進行瞭測試,在32~40 GHz的頻率範圍內,插入損耗小于2.36 dB,迴波損耗大于7.22 dB;在整箇Ka頻段內,插入損耗小于3.49 dB.
개소료일충신영적、괄용우호미파빈단적구형파도-미대과도전로결구.해과도전로구유삽입손모저、빈대관、중복성호적특성.기구형파도E면상대우미대전로면,이급전자신호전수방향적위치여척파도-미대과도상동.해과도전로적미대선여파도적전환부분채용비접촉식결구,병설계료가조절원건,종이재유일정가공오차적조건하개선기산품전수특성.이용고빈방진연건CST,재Ka빈단진행료우화방진,병대이용기우화치소설계적일대배고배적전로실물진행료측시,재32~40 GHz적빈솔범위내,삽입손모소우2.36 dB,회파손모대우7.22 dB;재정개Ka빈단내,삽입손모소우3.49 dB.
A Hovel structure of millimeter waveguide-to-microstfip transition is presented.This transition structure is of several virtues such as low insertion loss.broadband and easy to reproduce.The position of waveguide E-plane,microstrip circuit and the direction in which the electromagnetic wave transmits relates to ridge waveguide to mierostrip transitions.The microstrip of this transition structure is separate from waveguide and a changeable component is devised in order to ameliorate its characteristics of transition even if there are certain discrepancies between design and final products.The transition design is analyzed and optimized in Ka-band by CST simulation software.A back-to-back transition which was fabricated according to the values optimized by simulation Was tested.The insertion loss and retum loss of a back-to-back transition is respectively below 2.36 dB and above 7.22 dB from 32 GHz to 40 GHz.Over the whole Ka band,the insertion loss of the back to back transition i8 below 3.49 dB.