CAJ | 학술논문

氧化锌材料是新一代宽禁带光电子半导体材料,我们通过等离子体分子束外延设备,在a-plane的蓝宝石衬底生长了高质量的氧化锌外延材料.在生长过程中用反射高能电子束衍射仪(RHEED),在位地研究了生长时材料薄膜的表面形貌.通过调节ZnMgO材料镁的组份,生长了禁带宽度可调的宽禁带材料.用紫外-可见透射光谱研究了ZnO,Zn0.89Mg0.11O和Zn0.80Mg0.20薄膜材料的透射和吸收光谱性质,观察到Zn0.89Mg0.11O,Zn0.80Mg0.20材料的吸收边的蓝移现象等.以上说明了我们用分子束外延生长设备成功的生长了高质量的氧化锌和组份渐变的ZnMgO薄膜材料.
양화자재료시신일대관금대광전자반도체재료,아문통과등리자체분자속외연설비,재a-plane적람보석츤저생장료고질량적양화자외연재료.재생장과정중용반사고능전자속연사의(RHEED),재위지연구료생장시재료박막적표면형모.통과조절ZnMgO재료미적조빈,생장료금대관도가조적관금대재료.용자외-가견투사광보연구료ZnO,Zn0.89Mg0.11O화Zn0.80Mg0.20박막재료적투사화흡수광보성질,관찰도Zn0.89Mg0.11O,Zn0.80Mg0.20재료적흡수변적람이현상등.이상설명료아문용분자속외연생장설비성공적생장료고질량적양화자화조빈점변적ZnMgO박막재료.
Recently the growth techniques of single - crystalline ZnO film promote much attention to ZnO - related materials for electronic and optoelectronic applications. ZnO and ZnMgO films were grown by radical - source molecular beam epitaxy, and the epilays on a - plane sapphire substrates had a superior quality in crystallographic, optical and dectrical properties. The surface during growth was monitored by a reflection high-energy electron diffraction (RHEED) system. After the growth, these films were characterized by Field emission scanning electronic microscopy, transmission spectrum, photoluminescence (PL) using 325 nm line of a He - Cd laser, and electrical properties were measured by Hall measurement. The n - type doping with Al was successfully performed up to 5 × 1019 crn-3. Widening of bandgap energy by increasing Mg composition was observed by transmission spectrum.