CAJ | 학술논문

纳米交叉杆结构是最近引起人们广泛关注的一种纳米电子器件.它以高密度、低功耗、容错与并行等方面的良好性能,成为构建新型纳米存储器的热门选择.哈佛大学、惠普公司等相关研究机构已经在这方面取得了长足的进展.然而尽管电路模型一致,不同的研究思路导致在底层的物理结构和构造方法存在很大差异.回顾了近年来纳米交叉杆领域的研究进展,按照器件的物理结构和工作原理的不同将各种设计方法归纳为4类,并从制备方法和导线材质等其他多个方面作出对比,得出了一些初步的结论.
납미교차간결구시최근인기인문엄범관주적일충납미전자기건.타이고밀도、저공모、용착여병행등방면적량호성능,성위구건신형납미존저기적열문선택.합불대학、혜보공사등상관연구궤구이경재저방면취득료장족적진전.연이진관전로모형일치,불동적연구사로도치재저층적물리결구화구조방법존재흔대차이.회고료근년래납미교차간영역적연구진전,안조기건적물리결구화공작원리적불동장각충설계방법귀납위4류,병종제비방법화도선재질등기타다개방면작출대비,득출료일사초보적결론.
As a type of nanoelectronic device,nanocrossbar structure has been concerned a lot during the past few years.It has become one of the most competitive candidates for new nano-scale memories by great potential in integration density,power consumption,defect-tolerant and parallelism.The research progress of nanocrossbar field in recent years is reviewed.The devices are classified into four categories according to physical structure and scheme.And a detail comparison of other aspects between them,such as methods of fabrication and material of wire,is also given.