CAJ | 학술논문

用等离子体化学气相淀积系统制备了一种新颖的SiCOF/a-C:F双层低介电常数介质薄膜,并用红外光谱表征了该薄膜的化学结构.通过测量介质的折射率发现该薄膜长时间暴露在空气中,其光频介电常数几乎不变.然而,随退火温度的增加,其光频介电常数则会减小.基于实验结果讨论了几种可能的机理.二次离子质谱分析表明在Al/a-C:F/Si结构中F和C很容易扩散到Al中,但在Al/SiCOF/a-C:F/Si结构中,则没有发现C的扩散,说明SiCOF充当了C扩散的阻挡层.分析还发现在SiCOF和a-C:F之间没有明显的界面层.
용등리자체화학기상정적계통제비료일충신영적SiCOF/a-C:F쌍층저개전상수개질박막,병용홍외광보표정료해박막적화학결구.통과측량개질적절사솔발현해박막장시간폭로재공기중,기광빈개전상수궤호불변.연이,수퇴화온도적증가,기광빈개전상수칙회감소.기우실험결과토론료궤충가능적궤리.이차리자질보분석표명재Al/a-C:F/Si결구중F화C흔용역확산도Al중,단재Al/SiCOF/a-C:F/Si결구중,칙몰유발현C적확산,설명SiCOF충당료C확산적조당층.분석환발현재SiCOF화a-C:F지간몰유명현적계면층.
A novel double-layer film of SiCOF/a-C: F with a low dielectric constant is deposited using a PECVD system. The chemical structure of the film is characterized with Fourier transform infrared spectroscopy (FTIR).The measurements of the film refractive index reveal that the optical frequency dielectric constant ( n2 ) of the film is almost constant as a function of air exposure time, however, with increasing annealing temperature, the value of n2 for the film decreases. Possible mechanisms are discussed in detail. The analysis of SIMS profiles for the metal-insulator-silicon structures reveal that in the Al/a-C: F/Si structure,the annealing causes a more rapid diffusion of F in Al in comparison with C, but there is no obvious difference in Si. In addition, no recognizable verge exists between SiCOF and a-C: F films, and the SiCOF film acts as a barrier against the diffusion of carbon into the aluminum layer.