半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2003年
8期
789-793
,共5页
韩春林%刘瑞喜%国伟华%于丽娟%黄永箴
韓春林%劉瑞喜%國偉華%于麗娟%黃永箴
한춘림%류서희%국위화%우려연%황영잠
半导体激光器%测量技术%腔内损耗
半導體激光器%測量技術%腔內損耗
반도체격광기%측량기술%강내손모
semiconductor lasers%measurement technique%cavity loss
利用一种拟合方法测量FP腔半导体激光器的腔内损耗和准费米能级差.从放大的自发发射谱,利用Cassidy方法得到用于拟合过程的增益谱和单程放大的自发发射谱.利用上述方法,测出的1550nm InGaAsP量子阱脊型波导结构激光器的腔内损耗大约为24cm-1.
利用一種擬閤方法測量FP腔半導體激光器的腔內損耗和準費米能級差.從放大的自髮髮射譜,利用Cassidy方法得到用于擬閤過程的增益譜和單程放大的自髮髮射譜.利用上述方法,測齣的1550nm InGaAsP量子阱脊型波導結構激光器的腔內損耗大約為24cm-1.
이용일충의합방법측량FP강반도체격광기적강내손모화준비미능급차.종방대적자발발사보,이용Cassidy방법득도용우의합과정적증익보화단정방대적자발발사보.이용상술방법,측출적1550nm InGaAsP양자정척형파도결구격광기적강내손모대약위24cm-1.
A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process.For a 1550nm quantum well InGaAsP ridge waveguide laser,the cavity loss of about ~24cm-1 is obtained.