CAJ | 학술논문

以K2W2O7为助熔剂,采用泡生法生长钬镱双掺钨酸镧钾[Ho3+:Yb3+:KLa(WO4)2,Ho:Yb:KLW]晶体.通过热重-差热分析,确定晶体的熔点为1 118 ℃,在熔点以下晶体没有相变,热稳定性很好.X射线衍射分析表明:所生长的晶体为四方晶系Ho:Yb:KLW晶体,晶胞参数为a =b =0.538 nm,c =1.193 nm.测量晶体的红外及Raman光谱,并对峰值进行了归属.晶体样品的吸收光谱显示:Yb3+在978 nm处吸收峰较强,半峰宽为19 nm,适合采用InGaAs半导体激光二极管来作为激励源.表明Yb3+对Ho3+具有敏化作用.
이K2W2O7위조용제,채용포생법생장화의쌍참오산란갑[Ho3+:Yb3+:KLa(WO4)2,Ho:Yb:KLW]정체.통과열중-차열분석,학정정체적용점위1 118 ℃,재용점이하정체몰유상변,열은정성흔호.X사선연사분석표명:소생장적정체위사방정계Ho:Yb:KLW정체,정포삼수위a =b =0.538 nm,c =1.193 nm.측량정체적홍외급Raman광보,병대봉치진행료귀속.정체양품적흡수광보현시:Yb3+재978 nm처흡수봉교강,반봉관위19 nm,괄합채용InGaAs반도체격광이겁관래작위격려원.표명Yb3+대Ho3+구유민화작용.
Holmium, ytterbium co-doped potassium lanthanum tungstate crystal (Ho3+:Yb3+:KLa(WO4)2, Ho:Yb:KLW) was grown by the Kyropoulos method using K2W2O7 as the flux. The melting point determined by thermogravimetry-differential thermal analysis is 1 118 ℃. There is no phase transition below the melting point, and it has good thermal stability. The grown crystal was Ho:Yb:KLW crystal belonging to the tetragonal crystal system, and the lattice parameters obtained by X-ray diffraction analysis are a =b =0.538 nm and c=1.193 nm. The infrared spectra and Raman spectra of the crystal were measured and the peak values of the spectra were assigned. The absorption peak of Yb3+ at 978 nm is stronger, and the half-width of the peak is 19 nm. The crystal is suitable for use in InGaAs semiconductor laser diodes as the excitation source. The results indicate that Yb3+ has a sensitization effect on Ho3+.