纳米技术与精密工程
納米技術與精密工程
납미기술여정밀공정
NANOTECHNOLOGY AND PRECISION ENGINEERING
2010年
5期
460-464
,共5页
谢丹%武潇%任天令%刘理天%党智敏
謝丹%武瀟%任天令%劉理天%黨智敏
사단%무소%임천령%류리천%당지민
嵌入式微电容%聚酰亚胺(PI)%钛酸钡(BT)%图形化
嵌入式微電容%聚酰亞胺(PI)%鈦痠鋇(BT)%圖形化
감입식미전용%취선아알(PI)%태산패(BT)%도형화
embedded capacitor%polyimide(PI)%barium titanate(BaTiO3)%pattern
嵌入式微电容技术是一种能够使电子器件微型化,并提高其性能及可靠性的方法.研究适用于嵌入式环境的高介电材料,有着重要的意义.采用粒径为92 nm的钛酸钡(BaTiO3)颗粒作为纳米无机填充颗粒,选用聚酰亚胺(PI)作为有机基体制备新型BaTiO3/PI纳米复合薄膜,并对该薄膜的介电性能、耐压特性及温度特性进行了测试;并采用光刻、溅射、刻蚀等工艺,对BaTiO3/PI纳米复合薄膜进行图形化研究,制造嵌入式微电容器件原型,其后对该器件的介电性能进行了测试.测试结果显示,嵌入式电容器件原型的介电常数在低频下达到15以上,击穿场强达到58 MV/m以上,而刻蚀和溅射工艺对薄膜的性能影响不大.
嵌入式微電容技術是一種能夠使電子器件微型化,併提高其性能及可靠性的方法.研究適用于嵌入式環境的高介電材料,有著重要的意義.採用粒徑為92 nm的鈦痠鋇(BaTiO3)顆粒作為納米無機填充顆粒,選用聚酰亞胺(PI)作為有機基體製備新型BaTiO3/PI納米複閤薄膜,併對該薄膜的介電性能、耐壓特性及溫度特性進行瞭測試;併採用光刻、濺射、刻蝕等工藝,對BaTiO3/PI納米複閤薄膜進行圖形化研究,製造嵌入式微電容器件原型,其後對該器件的介電性能進行瞭測試.測試結果顯示,嵌入式電容器件原型的介電常數在低頻下達到15以上,擊穿場彊達到58 MV/m以上,而刻蝕和濺射工藝對薄膜的性能影響不大.
감입식미전용기술시일충능구사전자기건미형화,병제고기성능급가고성적방법.연구괄용우감입식배경적고개전재료,유착중요적의의.채용립경위92 nm적태산패(BaTiO3)과립작위납미무궤전충과립,선용취선아알(PI)작위유궤기체제비신형BaTiO3/PI납미복합박막,병대해박막적개전성능、내압특성급온도특성진행료측시;병채용광각、천사、각식등공예,대BaTiO3/PI납미복합박막진행도형화연구,제조감입식미전용기건원형,기후대해기건적개전성능진행료측시.측시결과현시,감입식전용기건원형적개전상수재저빈하체도15이상,격천장강체도58 MV/m이상,이각식화천사공예대박막적성능영향불대.
Embedded capacitor technique is an approach to miniaturizing electronic devices and enhancing their performance and reliability. Therefore, it is of great importance to study high dielectric materials that can be used in embedded environment. In this paper, barium titanate (BaTiO3) particles with average size of 92 nm were used as inorganic nano-fillers and polyimide (PI) was adopted as matrix to fabricate the novel BaTiO3/PI nanocomposite dielectric films, whose dielectric properties, electric breakdown strength and temperature properties were tested. The film was patterned, sputtered and etched to fabricate a prototype embedded capacitor, dielectric properties of which were also tested. Test results indicate that the prototype embedded capacitor has dielectric permittivity higher than 15 at low frequency and electric breakdown strength above 58 MV/m, and etching and sputtering have little impact on the films dielectric properties.