CAJ | 학술논문

通过对掩膜版上不同狭缝与遮挡条设计与TFT沟道形貌、电学特性相互关系的分析,发现随着狭缝与遮挡尺寸的减小,TFT的电学特性、沟道处光刻胶起伏与最终关键尺寸偏移量都会改善.狭缝的尺寸比遮挡条的尺寸对TFT特性的影响更加显著.考虑到沟道转角处的短路几率问题,小的狭缝与遮挡条尺寸设计更加适合于四次掩膜光刻工艺,转角处的缺陷可以通过调整遮挡条的尺寸来避免.
통과대엄막판상불동협봉여차당조설계여TFT구도형모、전학특성상호관계적분석,발현수착협봉여차당척촌적감소,TFT적전학특성、구도처광각효기복여최종관건척촌편이량도회개선.협봉적척촌비차당조적척촌대TFT특성적영향경가현저.고필도구도전각처적단로궤솔문제,소적협봉여차당조척촌설계경가괄합우사차엄막광각공예,전각처적결함가이통과조정차당조적척촌래피면.
By analyzing the relation among different slit & bar design of mask, TFT channel profile and electric characteristic, it's found that the TFT electric characteristic, ripple size and channel FICD bias are becoming better while slit or bar size decreases. The slit size has greater influence than bar size on TFT characteristic. Considering the ratio of short in the corner of channel, the small slit & bar design is suitable for four mask processing, and the corner defect can be avoided by tuning bar size.