CAJ | 학술논문

通过丝网印刷技术,将碳纳米管(carbon nanotube,CNT)浆料直接转移到CrCuCr薄膜衬底电极、掺Sn的In_2O_3(indium tin oxides,ITO)透明导电薄膜衬底电极和Ag浆导电厚膜衬底电极上,高温烧结后得到CNT阴极,并对CNT阴极进行表面形貌和场发射性能的研究.结果表明,不同衬底电极对CNT阴极场发射性能的影响不一样,CrCuCr薄膜衬底电极CNT阴极、ITO透明导电薄膜衬底电极CNT阴极及Ag浆厚膜导电衬底电极CNT阴极场发射的开启电场分别为0.99、2.05和2.46V/μm;当电场为3.0V/μm时,它们的亮度分别为2472、1889、587cd/m~2.CrCuCr薄膜衬底电极CNT阴极的场发射性能最优,ITO透明导电薄膜衬底电极CNT阴极次之,Ag浆厚膜导电衬底电极CNT阴极最差,并根据金属-半导体理论模型分析了原因.
통과사망인쇄기술,장탄납미관(carbon nanotube,CNT)장료직접전이도CrCuCr박막츤저전겁、참Sn적In_2O_3(indium tin oxides,ITO)투명도전박막츤저전겁화Ag장도전후막츤저전겁상,고온소결후득도CNT음겁,병대CNT음겁진행표면형모화장발사성능적연구.결과표명,불동츤저전겁대CNT음겁장발사성능적영향불일양,CrCuCr박막츤저전겁CNT음겁、ITO투명도전박막츤저전겁CNT음겁급Ag장후막도전츤저전겁CNT음겁장발사적개계전장분별위0.99、2.05화2.46V/μm;당전장위3.0V/μm시,타문적량도분별위2472、1889、587cd/m~2.CrCuCr박막츤저전겁CNT음겁적장발사성능최우,ITO투명도전박막츤저전겁CNT음겁차지,Ag장후막도전츤저전겁CNT음겁최차,병근거금속-반도체이론모형분석료원인.
The effect of field emission properties of carbon nanotube (CNT) cathodes on CrCuCr thin-film, indium tin oxides (ITO) transparent-film and silver (Ag) paste thick-film were investigated, which prepared by screen-printing, sintered with high temperature. The morphologies of CNT cathodes on different electrode substrates were observed by scanning electron mircroscope (SEM), and the field emission properties were characterized in the same condition of 1. 33×10~(-5)Pa. The results showed that three kinds of CNT cathodes have different field emission properties. The field emission tests indicate that the turn on electric field of the CNT cathode on CrCuCr thin-film is 0. 99V/mm, the one on ITO thin-film's 2. 05V/mm, the one on Ag paste thick-film's 2. 46V/mm. When the electric field is 3. 0V/μm, the brightness luminosities of CrCuCr-cathode, ITOcathode and Ag paste-cathode were 2472, 1889, 587cd/m~2, respectively. It can be speculated that the field emission property of the CNT cathode on CrCuCr thin-film takes precedence over the others, and the one on Ag paste thick-film is lousiest.