浙江大学学报(英文版)
浙江大學學報(英文版)
절강대학학보(영문판)
JOURNAL OF ZHEJIANG UNIVERSITY SCIENCE
2004年
2期
212-217
,共6页
沈大可%韩高荣%杜丕一%阙端麟%SOU I.K
瀋大可%韓高榮%杜丕一%闕耑麟%SOU I.K
침대가%한고영%두비일%궐단린%SOU I.K
UV LCLV%Transmission mode%Polycrystalline ZnS0.8Se0.2 thin film%MBE
The structural characteristics and optical and electrical properties of molecular-beam-epitaxy (MBE) grown ZnS0.8Se0.2 thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. The X-ray diffraction (XRD)results indicated that high quality polycrystalline ZnS0.8Se0.2 thin film grown at the optimized temperature had a preferred orientation along the (111) planes. The transmission electron microscopy (TEM) cross-sectional micrograph of the sample showed a well defined columnar structure with lateral crystal dimension in the order ofa few hundred angstroms. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W had been demonstrated and for wavelengths longer than 450 nm, the response was down from the peak response by more than 3 orders of magnitude. The thin ZnS0.8Se0.2 photosensor layer, with a wide energy gap and anisotropic electrical property, makes a transmission UV liquid crystal light valve ( LCLV) with high resolution feasible.
