电子器件
電子器件
전자기건
JOURNAL OF ELECTRON DEVICES
2008年
1期
308-311
,共4页
王国政%李野%高延军%姜德龙%付申成%吴奎%端木庆铎
王國政%李野%高延軍%薑德龍%付申成%吳奎%耑木慶鐸
왕국정%리야%고연군%강덕룡%부신성%오규%단목경탁
微通道板%微加工%刻蚀%硅%像增强器
微通道闆%微加工%刻蝕%硅%像增彊器
미통도판%미가공%각식%규%상증강기
Microchannel plate%Micromachining%Eching%Silicon%Image Intensifier
微通道板作为电子倍增器件可以对电子、离子、紫外和软X射线进行探测和成像.传统微通道板制备是采用玻璃纤维拉制和氢还原等技术,提出分别采用半导体体微加工和电化学腐蚀制备硅微通道板的新技术.在干法刻蚀中采用 ICP 技术制备了孔径为 6~20 μm、间隔4~8 μm、长径比 15~30 的硅微通道板,初步试验结果为对于长径比为 16 的样品,电子增益为 102 数量级.同时,开展了湿法电化学腐蚀技术制作硅微通道板的研究,分析讨论了电化学腐蚀微通道板的机理.结果表明,干法和湿法刻蚀技术可以制备高长径比硅微通道板,与 ICP 技术型比,电化学腐蚀具有较低的成本.
微通道闆作為電子倍增器件可以對電子、離子、紫外和軟X射線進行探測和成像.傳統微通道闆製備是採用玻璃纖維拉製和氫還原等技術,提齣分彆採用半導體體微加工和電化學腐蝕製備硅微通道闆的新技術.在榦法刻蝕中採用 ICP 技術製備瞭孔徑為 6~20 μm、間隔4~8 μm、長徑比 15~30 的硅微通道闆,初步試驗結果為對于長徑比為 16 的樣品,電子增益為 102 數量級.同時,開展瞭濕法電化學腐蝕技術製作硅微通道闆的研究,分析討論瞭電化學腐蝕微通道闆的機理.結果錶明,榦法和濕法刻蝕技術可以製備高長徑比硅微通道闆,與 ICP 技術型比,電化學腐蝕具有較低的成本.
미통도판작위전자배증기건가이대전자、리자、자외화연X사선진행탐측화성상.전통미통도판제비시채용파리섬유랍제화경환원등기술,제출분별채용반도체체미가공화전화학부식제비규미통도판적신기술.재간법각식중채용 ICP 기술제비료공경위 6~20 μm、간격4~8 μm、장경비 15~30 적규미통도판,초보시험결과위대우장경비위 16 적양품,전자증익위 102 수량급.동시,개전료습법전화학부식기술제작규미통도판적연구,분석토론료전화학부식미통도판적궤리.결과표명,간법화습법각식기술가이제비고장경비규미통도판,여 ICP 기술형비,전화학부식구유교저적성본.
Microchannel plate (MCP) is an image intensifier widely used for detecting and imaging of the e-lectrons, ions, UV radiation, and soft X-ray fluxes. The traditional preparation of MCP is a process of glass fiber drawing and hydrogen reduction. A new method for fabricating MCP was proposed and studied.A silicon MCP was prepared based on bulk-micromachining technology, dry etching technology and elec-trochemical process respectively. In dry etching, a Si-MCP with 15-30 aspect ratio of the microchannel,6~20 μm dimension of pore, 4~8 μm space were prepared by Inductively Coupled Plasma (ICP). The e-lectron gain for the sample of aspect ratio of 16 was about 102. In wet process, both p-type and n-type sili-con was selected as the substrate for MCP. The electrochemical mechanism of silicon anisotropy etching were investigated and discussed. The results shows that the high aspect ratio of silicon microchannel arrays can be made by both dry and wet etching processes. The electrochemical process for silicon microchannel arrays has lower cost than ICP process.