CAJ | 학술논문

利用石英管型波等离子体化学气相沉积装置在Si衬底上沉积了纳米片状碳膜,然后采用电子束蒸镀方法在碳膜表面沉积了一层2nm厚的Ti膜,并在高真空系统中测量了覆盖Ti膜前后的纳米片状碳膜的场发射特性.研究表明:覆盖Ti膜的纳米片状碳膜因表面生成碳化钛而改性,使得场发射特性得到改善;表面覆盖Ti膜后,阈值电场由2.6V/μm下降到2.0V/μm,当电场增加到9V/μm时,场发射电流由12.4mA/cm2增加到20.2mA/cm2.
이용석영관형파등리자체화학기상침적장치재Si츤저상침적료납미편상탄막,연후채용전자속증도방법재탄막표면침적료일층2nm후적Ti막,병재고진공계통중측량료복개Ti막전후적납미편상탄막적장발사특성.연구표명:복개Ti막적납미편상탄막인표면생성탄화태이개성,사득장발사특성득도개선;표면복개Ti막후,역치전장유2.6V/μm하강도2.0V/μm,당전장증가도9V/μm시,장발사전류유12.4mA/cm2증가도20.2mA/cm2.
Nano-sheet carbon films (NSCFs) were fabricated on Si wafer chips by means of quartz-tube-type microwave plasma chemical vapour deposition (MWPCVD). In order to further improve the field emission (FE) current density, a 2-nm Ti film was prepared on the samples by using electron beam (EB) evaporation. The FE characteristics of the Ti-coated NSCF were measured in an ultrahigh vacuum system. The FE properties of the NSCF are obviously improved due to its surface modified by titanium carbide after deposition of a thin layer of Ti film. The threshold field is decreased from 2.6V/μm to 2.0V/μm and the FE current density at a macroscopic electric field of 9V/μm is increased from 12.4mA/cm2 to 20.2mA/cm2 for Ti-coated nano-sheet carbon films.