CAJ | 학술논문

采用MOCVD外延生长11周期InN/GaN量子阱结构样品,原子力显微镜表面形貌结果显示实现了台阶流动生长模式.通过高分辨率X射线衍射与掠入射X射线反射谱技术获得了阱层与垒层的实际厚度.从（102）非对称衍射面与（002）对称衍射面的倒异空间图,确认了InN阱层处于与GaN共格生长的完全应变状态,获得了GaN缓冲层的晶体质量信息及其c轴与a轴晶格常数,确认外延层因受衬底热失配的影响处于压应变状态.
채용MOCVD외연생장11주기InN/GaN양자정결구양품,원자력현미경표면형모결과현시실현료태계류동생장모식.통과고분변솔X사선연사여략입사X사선반사보기술획득료정층여루층적실제후도.종（102）비대칭연사면여（002）대칭연사면적도이공간도,학인료InN정층처우여GaN공격생장적완전응변상태,획득료GaN완충층적정체질량신식급기c축여a축정격상수,학인외연층인수츤저열실배적영향처우압응변상태.
Step flow growth has been observed on the surface morphology of eleven periods InN /GaN quantum well structure grown by MOCVD.The high-resolution x-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness of InN and GaN.The asymmetric（102） reflection and symmetric（002） reflection reciprocal space map show that a-axis lengths of both InGaN well layers and GaN templates are identical.It is confirmed that InN / GaN MQWs structure of the sample is grown coherently on GaN templates.The c-axis and a-axis lengths of GaN buffer layer show that it is compressed,due to the thermal strain which is originated from the difference in thermal expansion coefficients between GaN epilayers and sapphire substrates during cooling from the growth temperature to room temperature.