CAJ | 학술논문

研究了利用低温等温凝固技术实现Cu-Sn键合在MEMS圆片级封装中的应用.基于Cu-Sn二元平衡相图,对键合层结构进行了设计,同时设计了用于测试的键合图形,并对设计的键合结构进行了流片实验.通过对圆片制作及键合等工艺的一系列优化,在250℃的低温条件下生成了熔点为415℃的金属间化合物,获得了良好的键合层.得到的键合样品剪切力强度值达到了GJB548B-2005标准的要求.研究表明,Cu-Sn等温凝固键合技术具有实际应用的潜力.
연구료이용저온등온응고기술실현Cu-Sn건합재MEMS원편급봉장중적응용.기우Cu-Sn이원평형상도,대건합층결구진행료설계,동시설계료용우측시적건합도형,병대설계적건합결구진행료류편실험.통과대원편제작급건합등공예적일계렬우화,재250℃적저온조건하생성료용점위415℃적금속간화합물,획득료량호적건합층.득도적건합양품전절력강도치체도료GJB548B-2005표준적요구.연구표명,Cu-Sn등온응고건합기술구유실제응용적잠력.
A new wafer bonding technique was described based on Cu-Sn isothermal solidification (IS) technology for MEMS wafer-level packaging. Based on equilibrium phase diagram of Cu-Sn alloy, the structure of the intermediate multi-layers and bonding patterns were designed, and the bonding process was optimized. Bonding layer which was almost void-free, with a melting point of 415℃, were successfully made at 250℃. The bonding layer can meet the requirements of the shear strength test specified by GJB548B-2005. The results show that the Cu-Sn IS technology has great potential of application.