中国科学G辑(英文版)
中國科學G輯(英文版)
중국과학G집(영문판)
SCIENCE IN CHINA (PHYSICS ASTRONOMY)
2003年
4期
371-381
,共11页
高贵珍%刘宁%郭焕银%蔡之让%彭振生%童伟%张昌锦%张裕恒
高貴珍%劉寧%郭煥銀%蔡之讓%彭振生%童偉%張昌錦%張裕恆
고귀진%류저%곽환은%채지양%팽진생%동위%장창금%장유항
magnetic structure%transport properties%colossal magnetoresistance effect
The influence of Gd doping at La-site on the electrical transport properties and the colossal magnetoresistance of La0.7-xGdxSr0.3MnO3 (x = 0.00, 0.10, 0.15, 0.20, 0.30, 0.40, 0.50, 0.60, and 0.70) is studied. The experimental results indicate that the transport properties exhibit abnormal behavior under high doping condition. For x = 0.50, we find that a transition from metal to insulator occurs after the occurrence of insulator-metal transition near Tc, which seldom occurs in ABO3 structure. For samples x = 0.60 and 0.70, it exhibits insulator behavior far above Tc. These abnormal behaviors are attributed to different magnetic background, i.e. the system undergoes a transition from long range ferromagnetic order to the cluster-spin glass state and further to antiferromagnetic order.
