CAJ | 학술논문

摘要　本文介绍利用界面混合技术对GaAs/AlGaAs量子阱结构进行微调，通过荧光光谱和光响应电流谱给出了质子注入和快速退火对禁带宽度及导带内子带位置的影响，荧光光谱峰位随注入剂量(5× 1014～5×1015～cm-2)的增加从766～nm持续蓝移至753～nm，光响应峰值波长从8.2～μm移至10.3～μm。
적요　본문개소이용계면혼합기술대GaAs/AlGaAs양자정결구진 행미조，통과형광광보화광향응전류보급출료질자주입화쾌속퇴화대 금대관도급도대내자대위치적영향，형광광보봉위수주입제량(5× 1014～5×1015～cm-2)적증가종766～nm지속람이지753～nm，광향 응봉치파장종8.2～μm이지10.3～μm。
In this paper we shall demonstrate the use of intermixing in modify of GaAs/AlGaAs quantum-well. The paper shows that proton implantation can achieve large energy shifts after standard annealing procedures. The PL and photoresponse spectrum were measured as a function of ion dose in the range 5×1014～cm-2 to 2.5×1015～cm-2, the peak photoresponse wavelength was tunable between 8.4～μm to 10.2～μm and PL peak from 780～nm to 850～nm.