CAJ | 학술논문

采用在硅上磁控溅射金属钛膜再热氧化的工艺制备了多晶氧化钛薄膜.测量了Ag/TiOx/Si/Ag电容器的I-V和C-V特性.结果表明,氧化钛薄膜的厚度为150～250nm,其介电常数是40～87.随着氧化时间的缩短,氧化钛薄膜中的固定电荷减少,漏电特性得到改善.
채용재규상자공천사금속태막재열양화적공예제비료다정양화태박막.측량료Ag/TiOx/Si/Ag전용기적I-V화C-V특성.결과표명,양화태박막적후도위150～250nm,기개전상수시40～87.수착양화시간적축단,양화태박막중적고정전하감소,루전특성득도개선.
Polycrystalline titanium oxide films are fabricated on silicon by thermally oxidizing titanium.The current-voltage and capacitance-voltage characteristics of the Ag/TiOx/Si/Ag capacitors are measured.The thickness of the titanium oxide films arranges from 150nm to 250nm,and their dielectric constants are within 40～87.As the oxidation time is shortened,the fixed charges of the titanium oxide films become less and the leakage current characteristics become better.