亚0.1μm高K栅介质MOSFETs的特性
아0.1μm고K책개질MOSFETs적특성
Characterization of Sub-100nm MOSFETs with High K Gate Dielectric
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2001年 9期 1107-1111 ,共5页

    朱晖文%刘晓彦%沈超%康晋锋%韩汝琦

    주휘문%류효언%침초%강진봉%한여기

    高K材料%栅介质%金属-氧化物-半导体场效应晶体管 高K材料%柵介質%金屬-氧化物-半導體場效應晶體管
    고K재료%책개질%금속-양화물-반도체장효응정체관
    用二维模拟软件ISE研究了典型的70nm高K介质MOSFETs的短沟性能.结果表明,由于FIBL效应,随着栅介质介电常数的增大,阈值电区减小,而漏电流和亚阈值摆幅增大,导致器件短沟性能退化.这种退化可以通过改变侧墙材料来抑制.
    용이유모의연건ISE연구료전형적70nm고K개질MOSFETs적단구성능.결과표명,유우FIBL효응,수착책개질개전상수적증대,역치전구감소,이루전류화아역치파폭증대,도치기건단구성능퇴화.저충퇴화가이통과개변측장재료래억제.
    The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field and lower the source/drain junction resistance.The sidewall material is found very useful to eliminate the fringing-induced berrier lowing effect.
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