CAJ | 학술논문

在电荷泵技术的基础上,提出了一种新的方法用于分离和确定氧化层陷阱电荷和界面陷阱电荷对pMOS器件热载流子应力下的阈值电压退化的作用,并且这种方法得到了实验的验证.结果表明对于pMOS器件退化存在三种机制:电子陷阱俘获、空穴陷阱俘获和界面陷阱产生.需要注意的是界面陷阱产生仍然是pMOS器件热载流子退化的主要机制,不过氧化层陷阱电荷的作用也不可忽视.
재전하빙기술적기출상,제출료일충신적방법용우분리화학정양화층함정전하화계면함정전하대pMOS기건열재류자응력하적역치전압퇴화적작용,병차저충방법득도료실험적험증.결과표명대우pMOS기건퇴화존재삼충궤제:전자함정부획、공혈함정부획화계면함정산생.수요주의적시계면함정산생잉연시pMOS기건열재류자퇴화적주요궤제,불과양화층함정전하적작용야불가홀시.
A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.