湿法化学腐蚀法估算GaN外延层中位错密度
습법화학부식법고산GaN외연층중위착밀도
Evaluation of Dislocation Densities in GaN Epilayers by Wet Chemical Etching
  • 万方数据
    半导体技术 반도체기술
    SEMICONDUCTOR TECHNOLOGY
    2009年 12期 1205-1208 ,共4页

    曹明霞%于广辉%王新中%林朝通%卢海峰%巩航

    조명하%우엄휘%왕신중%림조통%로해봉%공항

    GaN%湿法化学腐蚀%熔融NaOH%熔融KOH GaN%濕法化學腐蝕%鎔融NaOH%鎔融KOH
    GaN%습법화학부식%용융NaOH%용융KOH
    GaN%wet chemical etching%molten NaOH%molten KOH
    研究了采用熔融NaOH对MOCVD生长的GaN外延层的湿法腐蚀结果,结合原子力显微镜表征其腐蚀坑形貌及腐蚀坑密度,得出了优化的腐蚀条件.通过与熔融KOH腐蚀结果对比分析发现,熔融NaOH腐蚀速率平缓,表面更平整,腐蚀坑更规则且密度更大.结合两种腐蚀结果,可以初步得出,熔融NaOH对GaN中刃型分量位错敏感,而熔融KOH对螺型分量位错更敏感,两种腐蚀剂相结合能够更完整地揭示GaN内部位错.
    연구료채용용융NaOH대MOCVD생장적GaN외연층적습법부식결과,결합원자력현미경표정기부식갱형모급부식갱밀도,득출료우화적부식조건.통과여용융KOH부식결과대비분석발현,용융NaOH부식속솔평완,표면경평정,부식갱경규칙차밀도경대.결합량충부식결과,가이초보득출,용융NaOH대GaN중인형분량위착민감,이용융KOH대라형분량위착경민감,량충부식제상결합능구경완정지게시GaN내부위착.
    Wet chemical etching using molten NaOH on GaN grown by MOCVD was studied. Optimized etching parameters were got by studying on the morphology and density of etch pits with AFM. Compared with the results in molten KOH, the etching surface and etching pits are more regular and the etching pits density is higher than that in molten NaOH. A primary conclusion is proposed that molten NaOH could reveal the dislocations including edge component of the Burgers vector, and molten KOH is more sensitive for th edislocations including screw component of the Burgers vector.
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