CAJ | 학술논문

在不同生长条件下,生长低组分InGaAs/GaAs自组织量子点并且使用接触式AFM进行测量.通过对生长条件的优化,得到高密度、高均匀性的量子点MBE生长条件,这对于自组织量子点在器件方面的应用,比如量子点红外探测器和量子点激光器,是非常重要的.同时,还与优化的InAs/GaAs生长条件进行了比较.
재불동생장조건하,생장저조분InGaAs/GaAs자조직양자점병차사용접촉식AFM진행측량.통과대생장조건적우화,득도고밀도、고균균성적양자점MBE생장조건,저대우자조직양자점재기건방면적응용,비여양자점홍외탐측기화양자점격광기,시비상중요적.동시,환여우화적InAs/GaAs생장조건진행료비교.
Self-assembled In0.35Ga0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM).In order to obtain high density and high uniformity of quantum dots,optimized conditions are concluded for MBE growth.Optimized growth conditions also compared with these of InAs/GaAs quantum dots.This will be very useful for InGaAs/GaAs QDs optoelectronic applications,such as quantum dots lasers and quantum dots infrared photodetectors.