CAJ | 학술논문

通过射频等离子体增强化学气相沉积,在高气压条件下制备了微晶硅薄膜,并用拉曼光谱仪(Raman)、扫描电镜(SEM)研究了微晶硅薄膜的微观结构.发现沉积速率在5Torr左右出现极大值,薄膜的晶化率随着沉积气压的升高而降低,薄膜表面的晶粒或团簇随着沉积气压的下降而增大,薄膜的粗糙度随着沉积气压的升高而降低.
통과사빈등리자체증강화학기상침적,재고기압조건하제비료미정규박막,병용랍만광보의(Raman)、소묘전경(SEM)연구료미정규박막적미관결구.발현침적속솔재5Torr좌우출현겁대치,박막적정화솔수착침적기압적승고이강저,박막표면적정립혹단족수착침적기압적하강이증대,박막적조조도수착침적기압적승고이강저.
Microcrystalline silicon thin films were deposited under high deposition pressures using radio frequency plasma enhanced chemical vapor deposition (RF PECVD). Microstructures were studied using Raman, scanning electron microscopy (SEM). It is found that deposition rate shows a maximum at around 5Torr. The crystalline volume ratio decreases with the deposition pressure increasing. Larger grains or clusters are observed as pressure decreases. The films become less poros as pressure increases.