CAJ | 학술논문

采用固相法在880～975 ℃下烧结制备了添加w(CuO)为2.00%, w(B_2O_3)为3.00%及w(SnO_2)为0.15%的ZnNb_2O_6-1.75TiO_2 基复合微波介质陶瓷.研究了该陶瓷的低温烧结机理、微波介电性能及其在多层片式陶瓷电容器中的应用.结果显示:随着烧结温度的提高,物相由Zn_2TiO_4,Zn_(0.17)Nb_(0.33)Ti_(0.5)O_2,ZnNb_2O_6向ZnTiNb_2O_8转变,ε_r和τ_f 减小,Q·f升高.但当t≥975 ℃时,出现过烧现象,晶体缺陷增多恶化了材料的Q·f .在950 ℃烧结4 h时,得到最好的介电性能:ε_r=36.7, τ_f = -22.6×10~(-6) /℃,Q·f =18 172.2 GHz.且在此温度下制备的多层片式陶瓷电容与内电极Ag90Pd10的兼容性良好,Res为0.342 6 Ω,tanδ为9×10~(-5),可靠性良好.
채용고상법재880～975 ℃하소결제비료첨가w(CuO)위2.00%, w(B_2O_3)위3.00%급w(SnO_2)위0.15%적ZnNb_2O_6-1.75TiO_2 기복합미파개질도자.연구료해도자적저온소결궤리、미파개전성능급기재다층편식도자전용기중적응용.결과현시:수착소결온도적제고,물상유Zn_2TiO_4,Zn_(0.17)Nb_(0.33)Ti_(0.5)O_2,ZnNb_2O_6향ZnTiNb_2O_8전변,ε_r화τ_f 감소,Q·f승고.단당t≥975 ℃시,출현과소현상,정체결함증다악화료재료적Q·f .재950 ℃소결4 h시,득도최호적개전성능:ε_r=36.7, τ_f = -22.6×10~(-6) /℃,Q·f =18 172.2 GHz.차재차온도하제비적다층편식도자전용여내전겁Ag90Pd10적겸용성량호,Res위0.342 6 Ω,tanδ위9×10~(-5),가고성량호.
ZnNb_2O_6-1.75TiO_2 microwave dielectric ceramics with w(CuO)=2.00%, w(B_2O_3)=3.00% and w(SnO_2)=0.15% additives were prepared at 880～975 ℃ through solid state reaction method. The mechanism of low-temperature sintering, the microwave dielectric properties and their application prepared ceramics in multi-layer chip capacitor were investigated. The results indicate that with increasing sintering temperature, the phase transforms from Zn_2TiO_4, Zn_(0.17)Nb_(0.33)Ti_(0.5)O_2, ZnNb_2O_6 to ZnTiNb_2O_8, the τ_f and ε_r values decline while the Q·f value increases. But when t≥975 ℃, Q·f value decreases because of the abnormal crystal growth and crystal defects. The materials sintered at 950 ℃ for 4 h exhibit excellent dielectric properties: εr =36.7, Q·f =18 172.2 GHz and τ_f = -22.6×10~(-6) ℃. The multi-layer chip capacitor made by this materials sintered at 950 ℃ shows good compatibility with Ag90Pd10 inner electrode and exhibit excellent properties and reliability(R_(es)=0.342 6 Ω,tanδ=9×10~(-5)).