真空
真空
진공
VACUUM
2009年
4期
16-19
,共4页
赵靖%张永爱%袁军林%郭太良
趙靖%張永愛%袁軍林%郭太良
조정%장영애%원군림%곽태량
Ta2O5%离子辅助镀膜%离子束流密度%化学计量比%漏电流密度
Ta2O5%離子輔助鍍膜%離子束流密度%化學計量比%漏電流密度
Ta2O5%리자보조도막%리자속류밀도%화학계량비%루전류밀도
Ta2O5%ion beam assisted film deposition%ion beam density%stoichiometric ratio%leakage current density
利用氧离子辅助电子束蒸发沉积Ta2O5薄膜,在dd定氧离子能量的条件下研究了氧离子束流密度对Ta2O5薄膜的微观结构、化学计量比和漏电流密度的影响.利用原子力显微镜和X射线衍射仪对Ta2O5薄膜微观结构进行表征研究,发现随着离子束流密度增大,沉积的Ta2O5薄膜致密性提高,粗糙度下降,但薄膜一直保持非晶态;同时能谱仪测试的结果表明,薄膜中O/Ta比例逐渐提高,直至呈现富氧状态.测量了不同薄膜样品的漏电流密度和击穿场强,发现随着离子束流密度增大,薄膜漏电流密度显著降低,击穿场强提高.总之,提高氧离子束流密度能够明显改善Ta2O5薄膜的微观结构和电学性能.
利用氧離子輔助電子束蒸髮沉積Ta2O5薄膜,在dd定氧離子能量的條件下研究瞭氧離子束流密度對Ta2O5薄膜的微觀結構、化學計量比和漏電流密度的影響.利用原子力顯微鏡和X射線衍射儀對Ta2O5薄膜微觀結構進行錶徵研究,髮現隨著離子束流密度增大,沉積的Ta2O5薄膜緻密性提高,粗糙度下降,但薄膜一直保持非晶態;同時能譜儀測試的結果錶明,薄膜中O/Ta比例逐漸提高,直至呈現富氧狀態.測量瞭不同薄膜樣品的漏電流密度和擊穿場彊,髮現隨著離子束流密度增大,薄膜漏電流密度顯著降低,擊穿場彊提高.總之,提高氧離子束流密度能夠明顯改善Ta2O5薄膜的微觀結構和電學性能.
이용양리자보조전자속증발침적Ta2O5박막,재dd정양리자능량적조건하연구료양리자속류밀도대Ta2O5박막적미관결구、화학계량비화루전류밀도적영향.이용원자력현미경화X사선연사의대Ta2O5박막미관결구진행표정연구,발현수착리자속류밀도증대,침적적Ta2O5박막치밀성제고,조조도하강,단박막일직보지비정태;동시능보의측시적결과표명,박막중O/Ta비례축점제고,직지정현부양상태.측량료불동박막양품적루전류밀도화격천장강,발현수착리자속류밀도증대,박막루전류밀도현저강저,격천장강제고.총지,제고양리자속류밀도능구명현개선Ta2O5박막적미관결구화전학성능.
Ta2O5 thin films were deposited on floating plane glass by electron beem evaporation assisted with oxygen ion beam.The effects of oxygen ion beam density on the microstructure,stoichiometric ratio and leakage current density of Ta2O5 films were studied under conditions that the oxygen ion energy was constant.The Ta2O5 films were characterized by AFM,XRD and EDS,and the results indicated that with the increasing oxygen ion beam density,the films become denser and smoother and are kept in amorphous state.The energy specturm showed that the value of O/Ta atomic ratio in the films imcreases gradually and,eventually,the films come into oxygen-rich state.With the leakage current density and breakdown field strength of the different film samples measured,it was found that the leakage current density decreases obviously and the breakdown field strength increases with increasing oxygen ion beam density.In conclusion,increasing the oxygen ion beam density can improve clearly the microstructure and electric properties of Ta2O5 films.