GaN基蓝紫光激光器的材料生长和器件研制
GaN기람자광격광기적재료생장화기건연제
Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2005年 2期 414-417 ,共4页

    杨辉%陈良惠%张书明%种明%朱建军%赵德刚%叶小军%李德尧%刘宗顺%段俐宏%赵伟%王海%史永生%曹青%孙捷%陈俊%刘素英%金瑞琴%梁骏吾

    양휘%진량혜%장서명%충명%주건군%조덕강%협소군%리덕요%류종순%단리굉%조위%왕해%사영생%조청%손첩%진준%류소영%금서금%량준오

    有机化学气相沉积%GaN基激光器%多量子阱%脊形结构%阈值电流密度 有機化學氣相沉積%GaN基激光器%多量子阱%脊形結構%閾值電流密度
    유궤화학기상침적%GaN기격광기%다양자정%척형결구%역치전류밀도
    metalorganic chemical vapor deposition%GaN-based laser diodes%multiple quantum wells%ridge geometry structure%threshold current density
    报道了国内首次研制成功的GaN基蓝紫光激光器的材料外延生长、器件工艺和特性.用MOCVD生长了高质量的GaN及其量子阱异质结材料,以及异质结分别限制量子阱激光器结构材料.GaN材料的X射线双晶衍射摇摆曲线(0002)对称衍射和(10(-1)2)斜对称衍射半宽分别为180″和185″;3μm厚GaN薄膜室温电子迁移率达到850cm2/(V·s).基于以上材料,分别成功研制了室温脉冲激射增益波导和脊型波导激光器,阈值电流密度分别为50和5kA/cm2,激光发射波长为405.9nm,脊型波导结构激光器输出光功率大于100mW.
    보도료국내수차연제성공적GaN기람자광격광기적재료외연생장、기건공예화특성.용MOCVD생장료고질량적GaN급기양자정이질결재료,이급이질결분별한제양자정격광기결구재료.GaN재료적X사선쌍정연사요파곡선(0002)대칭연사화(10(-1)2)사대칭연사반관분별위180″화185″;3μm후GaN박막실온전자천이솔체도850cm2/(V·s).기우이상재료,분별성공연제료실온맥충격사증익파도화척형파도격광기,역치전류밀도분별위50화5kA/cm2,격광발사파장위405.9nm,척형파도결구격광기수출광공솔대우100mW.
    Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.
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