CAJ | 학술논문

分析比较了不同种类衬底上无源器件(片上电感和电容)的损耗机理,在OPS(氧化多孔硅)和HR(高阻硅)低损耗衬底上分别实现了片上低通滤波器.为了研究衬底损耗,设计了平面螺旋电感,其Q值在两种衬底上的仿真结果都超过了20.在OPS衬底上的低通滤波器实测-3dB带宽为2.9GHz,通带插入损耗在500MHz为0.87dB;在HR衬底上的低通滤波器实测-3dB带宽为2.3GHz,通带插入损耗在500MHz为0.42dB.
분석비교료불동충류츤저상무원기건(편상전감화전용)적손모궤리,재OPS(양화다공규)화HR(고조규)저손모츤저상분별실현료편상저통려파기.위료연구츤저손모,설계료평면라선전감,기Q치재량충츤저상적방진결과도초과료20.재OPS츤저상적저통려파기실측-3dB대관위2.9GHz,통대삽입손모재500MHz위0.87dB;재HR츤저상적저통려파기실측-3dB대관위2.3GHz,통대삽입손모재500MHz위0.42dB.
The loss mechanisms of different passive devices (on-chip inductors and capacitors) on different substrates are analyzed and compared. OPS (oxidized porous silicon) and HR (high-resistivity) substrates are used as low-loss substrates for on-chip planar LPF (low pass filter) fabrication. For the study of substrate loss, a planar coil inductor is also designed. Simulation results show that Q (the quality factor) of the inductor on both substrates is over 20. Measurements of the LPF on OPS substrate give a - 3dB bandwidth of 2.9GHz and a midband insertion loss of 0. 87dB at 500MHz. The LPF on HR substrate gives a - 3dB bandwidth of 2.3GHz and a midband insertion loss of 0.42dB at 500MHz.